ASI MLN1030F

MLN1030F
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .250 2L FLG
A
DESCRIPTION:
ØD
B
The ASI MLN1030F is Designed for
E
G
FEATURES:
L
•
•
• Omnigold™ Metalization System
500 mA
MINIMUM
inches / mm
inches / mm
.028 / 0.71
.032 / 0.81
B
.740 / 18.80
C
.245 / 6.22
D
.128 / 3.25
20 V
TJ
-65 OC to +200 OC
TSTG
-65 OC to +200 OC
θ JC
20 OC/W
CHARACTERISTICS
SYMBOL
MAXIMUM
.255 / 6.48
.132 / 3.35
.125 / 3.18
.110 / 2.79
.117 / 2.97
.117 / 2.97
G
--- W
I
K
A
E
PDISS
J
DIM
F
VCE
F
H
P
MN
MAXIMUM RATINGS
IC
.060 x 45°
CHAMFER
C
H
.560 / 14.22
.570 / 14.48
I
.790 / 20.07
.810 / 20.57
J
.225 / 5.72
.235 / 5.97
K
.165 / 4.19
.185 / 4.70
L
.003 / 0.08
.007 / 0.18
M
.058 / 1.47
.068 / 1.73
N
.119 / 3.02
.135 / 3.43
P
.149 / 3.78
.187 / 4.75
ORDER CODE: ASI10622
O
TC = 25 C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 1 mA
50
V
BVCEO
IC = 5 mA
20
V
BVEBO
IE = 1 mA
3.5
V
ICEO
VCE = 18 V
hFE
VCE = 5.0 V
COB
VCB = 28 V
PG
VCE = 20 V
IC = 1.0 A
15
f = 1.0 MHz
POUT = 1.0 W
f = 1.0 GHz
12
1.0
mA
120
---
5.0
pF
dB
ICQ = 150 mA
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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