MRF390 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF390 is a Common Emitter Device Designed for Class A , AB and C Amplifier Applications in the 100 - 500 MHz Military Communications Band. PACKAGE STYLE .400 8L FLG C D A B 2 G 1 1 2 F U LL R O F E .19 25 2 .125 FEATURES INCLUDE: K • Gold Metalization • Emitter Ballasting • Input Matching 3 H 3 2 4 x .0 60 R I J N L M D IM M IN IM UM .115 / 2.92 D 7.0 A VCB 60 V O PDISS 140 W @ TC = 25 C TJ -55 C to +200 C O O O .130 / 3.30 .380 / 9.65 .390 / 9.91 G .735 / 18 .6 7 .765 / 19 .4 3 H .645 / 16 .3 8 .655 / 16 .6 4 I .895 / 22 .7 3 .905 / 22 .9 9 J .420 / 10 .6 7 .430 / 10 .9 2 K .003 / 0.08 .007 / 0.18 L .120 / 3.05 .130 / 3.30 M .159 / 4.04 .175 / 4.45 .395 / 10 .0 3 .405 / 10 .2 9 O -55 C to +200 C θJC 1.25 C/W .280 / 7.11 1 = COLLECTOR 2 = EMITTER 3 = BASE O CHARACTERISTICS F N O TSTG .075 / 1.91 .065 / 1.65 E IC .125 / 3.18 .360 / 9.14 C MAXIMUM RATINGS inche s / m m .030 / 0.76 A B M A X IM U M inche s / m m O TC = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 100 mA 30 V BVCES IC = 100 mA 60 V BVEBO IE = 10 mA 4.0 V Cob VCB = 28 V hFE VCE = 5.0 V IC = 1.0 A Pg ηc VCE = 28 V Pout = 50 W f = 1.0 MHz 52 10 f = 500 MHz 7.5 --8.5 55 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. pF dB % REV. A 1/1