MRF406 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF406 is Designed for 12.5 V 30 MHz Power Amplifier Applications. PACKAGE STYLE .380" 4L FLG .112 x 45° B A E FEATURES INCLUDE: • Common Emitter • Output Power = 20 W C Ø.125 NOM. FULL R J .125 B (PEP) E C D E F MAXIMUM RATINGS G IC 4.0 A VCE 20 V VCB 40 V O PDISS 80 W @ TC = 25 C TJ -65 C to +200 C O O O TSTG -65 C to +150 C θJC 2.2 C/W DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 MAXIMUM B .785 / 19.94 C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 .385 / 9.78 E O F .004 / 0.10 .006 / 0.15 G .085 / 2.16 .105 / 2.67 H .160 / 4.06 .180 / 4.57 .280 / 7.11 I O CHARACTERISTICS H I .240 / 6.10 J .255 / 6.48 O TC = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 50 mA 40 V BVCBO IC = 50 mA 40 V BVCEO IC = 50 mA 20 V BVEBO IE = 1.0 mA 4.0 V ICES VCE = 12.5 V hFE IC = 1.0 A Cob VCB = 12.5 V f = 1.0 MHz Pout VCE = 12.5 V f = 30 MHz GPE η IMD VCC = 12.5 V Icq = 25 mA IC ≤ 1.75 A Pout = 20 W (PEP) f = 30, 30.001 MHz ψ VCC = 12.5 V Icq = 25 mA IC ≤ 1.75 A Pout = 20 W (PEP) f = 30, 30.001 MHz 5.0 VCE = 5.0 V 10 mA --- 35 200 pF 20 W(PEP) 12 45 -30 dB % dB >30:1 ALL PHASE ANGLES A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1