MRF616 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF616 is Designed for Common Emitter Class C Amplifier Applications in 12.5 Volt UHF Mobile Radios. PACKAGE STYLE .280" 4L PILL A E FEATURES INCLUDE: • High Gain, 11 DB Typical • Gold Metallization • Emitter Ballasting C ØB B E MAXIMUM RATINGS ØC D E IC 250 mA VCBO 36 V PDISS 5.0 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +200 C DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 O O O MAXIMUM 1.055 / 26.80 B O O F C .275 / 6.99 .285 / 7.24 D .004 / 0.10 .006 / 0.15 E .050 / 1.27 .060 . 1.52 F .118 / 3.00 .130 / 3.30 O θJC 35 C/W CHARACTERISTICS O TC = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 5.0 mA 36 V BVCEO IC = 50 mA 16 V BVEBO IE = 1.0 mA 4.0 V hFE VCE = 5.0 V 20 --- COB VCB = 12.5 V PG ηC VCE = 12.5 V IC = 150 mA f = 1.0 MHz POUT = 1.0 W f = 470 MHz 10 3.5 pF 11 65 dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1