MRF838A NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .205 4L STUD DESCRIPTION: The MRF838A is a Common Emitter Device Designed for Class A, B and C Amplifier Applications up to 1.0 GHz. D 3 4 A 2 C 1 FEATURES INCLUDE: B G • Gold Metallization • Emitter Ballasting • High Gain E F H #8-32UNC J MAXIMUM RATINGS M INIM UM DIM IC 600 mA VCBO 36 V PDISS 8.75 W @ TC = 25 C TJ -65 Cto +200 C TSTG -65 Cto +200 C θJC 20 C/W inches / m m A .976 / 24.800 1.000 / 25.4000 B .976 / 24.800 1.000 / 25.4000 C .028 / 0.700 O O O O E .161 / 4.100 F .098 / 2.500 .110 / 2.800 G .200 / 5.100 .208 / 5.300 .196 / 5.000 H .004 / 0.100 .006 / 0.150 I .425 / 10.800 .465 / 11.800 J .200 / 5.100 2.05 / 5.200 1 & 3 = EMITER 2 = BASE 4 = COLLECTOR O CHARACTERISTICS .031 / 0.800 .138 / 3.500 D O M AXIM UM inches / m m O TC = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 10 mA 36 V BVCEO IC = 10 mA 18 V BVEBO IE = 1.0 mA 4.0 V hFE VCE = 5.0 V 20 --- COB VCB = 12.5 V PG ηC VCE = 12.5 V IC = 150 mA f = 1.0 MHz POUT = 1.0 W f = 870 MHz 7.5 6.5 50 7.5 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. pF dB % REV. A 1/1