MRF962 NPN SILICON RF TRANSISTOR DESCRIPTION: PACKAGE STYLE The ASI MRF962 is designed for Low-to-medium power amplifier applications, requiring high gain, low noise figure, and low intermodulation distortion. DIM A C D F G K L N FEATURES: • NF = 2.0 dB • Omnigold™ Metalization System • Hermetic stripline, ceramic package MAXIMUM RATINGS 100 mA VCB 20 V PDISS .75 W @ TC = 100 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 133 °C/W TC = 25 °C NONETEST CONDITIONS SYMBOL INCHES MIN MAX 0.175 0.205 0.075 0.100 0.033 0.039 0.008 0.012 0.030 0.045 0.285 0.320 0.415 0.450 -0.065 1 = COLLECTOR 2 = EMITTER 3 = BASE IC CHARACTERISTICS MILLIMETERS MIN MAX 4.44 5.21 1.90 2.54 0.84 0.99 0.20 0.30 0.76 1.14 7.24 8.13 10.54 11.43 -1.65 MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 1.0 mA 15 V BVCBO IC = 100 µA 20 V BVEBO IE = 100 µA 3.0 V ICBO VCB = 10 V hFE VCE = 10 V CCB VCB = 10 V ft VCE = 10 V NF VCE = 10 V IC = 50 mA 30 100 nA 200 --- 1.5 pF f = 1.0 MHz 1.2 IC = 50 mA f = 0.5 GHz 4.5 GHz IC = 10 mA f = 0.5 GHz 2.0 dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1