NE64700 NPN SILICON MICROWAVE TRANSISTOR DESCRIPTION: PACKAGE STYLE: CHIP 0.0007 Inch Gold Wire CHIP The ASI NE64700 is a bipolar transistor Designed for low noise applications at VHF, UFH and microwave frequencies up to 12 GHz. EMITTER • PG = 18.1 dB Typical @ 1.0 GHz • NF = 1.6 dB Typical @ 1.0 GHz MAXIMUM RATINGS IC 20 mA VCEO 7.0 V VCBO 9.0 V VEBO 1.5 V TJ -65 °C to +200 °C TSTG -65 °C to +150 °C CHARACTERISTICS SYMBOL 55 14 EMITTER FEATURES: 2 B 0.0007 Inch Gold Wire BASE Chip Dimension: (250 x 250) x 125 µm Bond Pad: 50 x 50 µm Die Attach: Gold Eutectic TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS ICBO VCB = 8.0 V 0.2 µA IEBO VEB = 1.0 V 1.0 µA hFE VCE = 8.0 V 250 --- CCB VCB = 8.0 V NF VCE = 8.0 V VCE = 8.0 V PG P1dB IC = 10 mA 50 f = 1.0 MHz 0.11 pF IC = 2.0 mA f = 1.0 MHz 1.6 dB IC = 10 mA f = 1.0 GHz 15 dB 12 dBm 12 GHz IC = 10 mA ft VCE = 8.0 V S21 2 100 IC = 10 mA f = 1.0 GHz 7.5 IC = 20 mA f = 1.0 GHz 18.1 IC = 10 mA f = 2.0 GHz 12.8 IC = 20 mA f = 2.0 GHz 12.6 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. dB REV. A 1/1