ASI TAN250A

TAN250A
RF POWER TRANSISTOR
DESCRIPTION:
The ASI TAN250A is a Common
Base Transistor Designed for DME,
TACAN and IFF Pulse Power Amplifier
Applications.
PACKAGE STYLE
FEATURES INCLUDE:
• Gold Metallization
• Hermetic Package
• Input/Output Matching
MAXIMUM RATINGS
IC
30 A
VCB
60 V
PDISS
575 W @ TC = 25 OC
TJ
-65 OC to +200 OC
T STG
-65 OC to +200 OC
θ JC
0.30 OC/W
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
BV CBO
IC = 20 mA
BV CES
IC = 25 mA
BV EBO
IE = 20 mA
ICBO
VCB = 50 V
hFE
VCE = 5 V
POUT
PG
ηC
TC = 25 OC
RBE = 10 Ω
IC = 1.0 A
VCC = 50 V
PIN = 13 W
Pulse Width = 20 µS
MINIMUM TYPICAL MAXIMUM
60
V
60
V
4.0
V
20
f = 960 to 1215 MHz
Duty Cycle = 5 %
UNITS
250
6.0
7.0
40
12
mA
120
--W
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
1/1
Specifications are subject to change without notice.