TPV8100B TPV8100B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV8100B is Designed for Transmitter Output Stages Covering TV Band IV and V, Operating at 28 V. FEATURES INCLUDE: • Internal Input, Output Matching • Common Emitter Configuration • Gold Metalization • Emitter Ballasting PACKAGE STYLE .438X.450 4LFL MAXIMUM RATINGS IC 12 A VCER 40 V RBE = 10 Ω PDISS 215 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +150 C θJC 0.8 C/W O O O O O 1 = COLLECTOR #1 2 = COLLECTOR #2 3 = BASE #1 4 = BASE #2 5 = EMITTER CASE (COMMON) O CHARACTERISTICS SYMBOL O TC = 25 C TEST CONDITIONS BVCER IC = 10 mA BVCBO MINIMUM TYPICAL MAXIMUM RBE = 75 Ω UNITS 30 V IC = 20 mA 65 V BVEBO IE = 10 mA 4.0 V ICER VCE = 28 V hFE VCE = 10 V IC = 2.0 A Gp VCE = 28 V Icq = 2X50 mA f = 860 MHz 8.5 dB η VCE = 28 V Icq = 2X50 mA f = 860 MHz 55 % f = 860 MHz 100 W Pout RBE = 75 Ω 30 Icq = 2X50 mA VCE = 28 V 1.0 dB COMPRESSION (ref = 25 W) 10 mA 120 --- FUNCTIONAL TESTS IN VIDEO (STANDARD BLACK LEVEL) Pout VCE = 28 V Icq = 2X50 mA f = 860 MHz 125 W Pout VCE = 32 V Icq = 2X25 mA f = 860 MHz 150 W A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1