UML10 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The UML10 is Designed for A 45° FEATURES: • • • Omnigold™ Metalization System B C D J E MAXIMUM RATINGS IC 1.1 A VCBO 60 V G H K 33 V VCEO inches / mm inches / mm A 1.010 / 25.65 1.055 / 26.80 B .220 / 5.59 .230 /5.84 C .270 / 6.86 .285 / 7.24 .007 / 0.18 D .003 / 0.08 E .117 / 2.97 PDISS 27 W @ TC = 25 OC F O O O -65 C to +150 C θ JC 8.0 OC/W CHARACTERISTICS SYMBOL .130 / 3.30 .245 / 6.22 H TSTG .137 / 3.48 .572 / 14.53 G -65 C to +200 C MAXIMUM MINIMUM 4.0 V O #8-32 UNC DIM VEBO TJ I F .255 / 6.48 .640 / 16.26 I J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 ORDER CODE: ASI10694 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVEBO IE = 20 mA 4.0 V BVCES IC = 20 mA 33 V ICBO VCB = 30 V hFE VCE = 5.0 V COB VCB = 28 V PG ηD VCC = 28 V IC = 0.5 A 25 f = 860 MHz POUT = 10 W f = 400 MHz 10 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1.0 mA 80 --- 15 pF dB % REV. A 1/1