VHB10-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB10-12F is Designed for PACKAGE STYLE .380 4L FLG FEATURES: • • • Omnigold™ Metalization System B .112 x 45° Ø.125 NOM. FULL R J .125 MAXIMUM RATINGS C D E F 2.0 A IC A G VCBO 36 V VCEO 18 V 36 V VCES 4.0 V VEBO DIM MINIMUM inches / mm MAXIMUM inches / mm A .220 / 5.59 .230 / 5.84 B .785 / 19.94 C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 .385 / 9.78 E PDISS 20 W @ TC = 25 OC O O -65 C to +200 C TJ O -65 C to +150 C θ JC 8.8 OC/W SYMBOL .004 / 0.10 .006 / 0.15 G .085 / 2.16 .105 / 2.67 H .160 / 4.06 .180 / 4.57 .280 / 7.11 .240 / 6.10 J TSTG CHARACTERISTICS F I O H I .255 / 6.48 ORDER CODE: ASI10712 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 15 mA 18 V BVCES IC = 50 mA 36 V BVEBO IE = 2.5 mA 4.0 V ICBO VCB = 12.5 V hFE VCE = 5.0 V COB VCB = 12.5 V PG ηC VCC = 12.5 V IC = 250 mA 5.0 f = 1.0 MHz POUT = 10 W f = 175 MHz 10 mA 200 --- 45 pF dB 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1.0 % REV. A 1/1