VMB100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 6L FLG The ASI VMB100-12 is Designed for A C 2x ØN FULL R FEATURES: D • • • Omnigold™ Metalization System B E .725/18,42 F G M K H MAXIMUM RATINGS IC 20 A VCBO 36 V J I L DIM MINIMUM inches / mm inches / mm A .150 / 3.43 .160 / 4.06 MAXIMUM .045 / 1.14 B C .210 / 5.33 .220 / 5.59 D .835 / 21.21 .865 / 21.97 VCEO 18 V E .200 / 5.08 .210 / 5.33 F .490 / 12.45 .510 / 12.95 VEBO 4.0 V G .003 / 0.08 PDISS 270 W @ TC = 25 OC I TJ -65 OC to +200 OC TSTG -65 OC to +150 OC θ JC 0.65 OC/W CHARACTERISTICS SYMBOL .007 / 0.18 .125 / 3.18 H .725 / 18.42 J .970 / 24.64 .980 / 24.89 K .090 / 2.29 .105 / 2.67 L .150 / 3.81 .170 / 4.32 .285 / 7.24 M .120 / 3.05 N .135 / 3.43 ORDER CODE: ASI10747 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 36 V BVCES IC = 100 mA 36 V BVCEO IC = 100 mA 18 V BVEBO IE = 10 mA 4.0 V ICES VCE = 15 V hFE VCE = 5.0 V COB VCB = 12.5 V MHz PG ηC VCE = 12.5 V IC = 5.0 A 20 f = 1.0 POUT = 100 W f = 88 MHz 10 mA --- --- 400 pF dB 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 15 % REV. A 1/1