2SC5345SF Semiconductor NPN Silicon Transistor Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response Ordering Information Type NO. Marking 2SC5345SF Package Code Z SOT-23F : hFE rank Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1.90 BSC KST-2069-000 0.9±0.1 0.15±0.05 2 0.4±0.05 3 0~0.1 2.9±0.1 1 PIN Connections 1. Base 2. Emitter 3. Collector 1 2SC5345SF Ta=25°°C Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 30 V Collector-Emitter voltage VCEO 20 V Emitter-Base voltage VEBO 4 V Collector current IC 20 mA Collector dissipation PC 150 mW Junction temperature Tj 150 °C Tstg -55~150 °C Storage temperature range Ta=25°°C Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=10µA, IE=0 30 - - V Collector-Emitter breakdown voltage BVCEO IC=5mA, IB=0 20 - - V Emitter-Base breakdown voltage BVEBO IE=10µA, IC=0 4 - - V Collector cut-off current ICBO VCB=30V, IE=0 - - 0.5 µA Emitter cut-off current IEBO VEB=4V, IC=0 - - 0.5 µA DC current gain h VCE=6V, IC=1mA 40 - 240 - IC=10mA, IB=1mA - - 0.3 V VCE=6V, IE=-1mA - 550 - MHz VCB=6V, IE=0, f=1MHz - 1.4 - pF Collector-Emitter saturation voltage Transistor frequency Collector output capacitance * FE VCE(sat) fT Cob * : hFE rank / R : 40~80, O : 70~140, Y : 120~240 KST-2069-000 2 2SC5345SF Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 2 IC-VCE Fig. 3 hFE-IC Fig. 4 fT-IE Fig. 5 Cob-VCB, Cib-VEB Fig. 6 Yie-IC KST-2069-000 3 2SC5345SF Electrical Characteristic Curves Fig. 7 IC-Yoe Fig. 8 IC-Yfe Fig. 9 IC - Yre KST-2069-000 4