DP030S Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.15V Typ. @IC/IB=-100mA/-10mA) • Suitable for low voltage large current drivers • Excellent hFE Linearity • Complementary pair with DN030S • Switching Application Ordering Information Type NO. Marking DP030S Package Code P01 SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1.90 BSC 0.9±0.1 0.15±0.05 2 0.4±0.05 3 0~0.1 2.9±0.1 1 KST-2108-000 PIN Connections 1. Base 2. Emitter 3. Collector 1 DP030S (Ta=25°°C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -15 V Collector-Emitter voltage VCEO -12 V Emitter-Base voltage VEBO -5 V Collector current IC -300 mA Collector dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C (Ta=25°°C) Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-50µA, IE=0 -15 - - V Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -12 - - V Emitter-Base breakdown voltage BVEBO IE=-50µA, IC=0 -5 - - V Collector cut-off current ICBO VCB=-12V, IE=0 - - -0.1 µA Emitter cut-off current IEBO VEB=-5V, IC=0 - - -0.1 µA hFE1 VCE=-1V, IC=-100mA 200 - 450 - hFE2 VCE=-1V, IC=-300mA 70 - - V DC current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance VCE(sat1) IC=-100mA, IB=-10mA - - -0.2 VCE(sat2) IC=-300mA, IB=-30mA - - -0.5 VBE(sat1) IC=-100mA, IB=-10mA - - -1.2 V VBE(sat2) IC=-300mA, IB=-30mA - - -1.7 V VCE=-5V, IC=-10mA - 350 - MHz VCB=-10V, IE=0, f=1MHz - 4 - pF fT Cob KST-2108-000 2 DP030S Electrical Characteristic Curves Fig. 2 IC-VBE Fig. 1 PC - Ta 1V Fig. 3 hFE - IC Fig. 4 IC - VCE Eohhfie Fig. 5 VCE(sat) - IC KST-2108-000 3