STS9015 Semiconductor PNP Silicon Transistor Description • General purpose application. • Switching application. Features • Excellent hFE linearity : hFE(IC=0.1mA) / hFE(IC=2mA) = 0.95(Typ.) • Low noise : NF = 10dB(Max.) • Complementary pair with STS9014 Ordering Information Type NO. Marking Package Code STS9015 STS9015 TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 4.5±0.1 2.25±0.1 2.06±0.1 14.0±0.40 0.4±0.02 1.27 Typ. 2.54 Typ. PIN Connections 1. Emitter 2. Base 3. Collector 0.38 1.20±0.1 1 2 3 KST-9018-000 1 STS9015 (Ta=25°°C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -50 V Collector-Emitter voltage VCEO -50 V Emitter-Base voltage VEBO -5 V Collector current IC -150 mA Emitter current IE 150 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C (Ta=25°°C) Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector cut-off current ICBO VCB=-50V, IE=0 - - -50 nA Emitter cut-off current IEBO VEB=-5V, IC=0 - - -100 nA DC current gain hFE* VCE=-5V, IC=-1mA 100 - 1000 - - -0.1 -0.3 V 60 - - MHz Collector-Emitter saturation voltage Transition frequency VCE(sat) fT IC=-100mA, IB=-10mA VCE=-10V, IC=-1mA Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz - 4 7 pF Noise figure NF VCE=-6V, IC=-0.1mA f=1KHz, Rg=10K1 - - 10 dB *: hFE rank / B : 100~300, C : 200~600, D : 400~1000. KST-9018-000 2 STS9015 Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 2 IC-VBE 5 Fig. 3 IC-VCE Fig. 4 hFE-IC Fig. 5 VCE(sat)-IC KST-9018-000 3