SB3411 / SB3411-(B) Semiconductor LED Lamp Features • Blue colored transparency lens type • φ3mm(T-1) all plastic mold type Outline Dimensions unit : mm STRAIGHT TYPE STOPPER 3.0±0.2 TYPE 3.0±0.2 4.0±0.2 4.0±0.2 5.0±0.2 5.0±0.2 5.5±0.5 0.4 25.0 MIN 0.4 25.0 MIN 1.0 MIN 1.0 MIN 2.54 NOM 2.54 NOM 1 2 1 2 3.8±0.2 3.8±0.2 KLB-1001-000 PIN Connections 1.Anode 2.Cathode 1 SB3411 / SB3411-(B) Absolute maximum ratings Characteristic Symbol Ratings Unit Power Dissipation PD 85 mW Forward Current IF 20 mA IFP 50 mA VR 4 V Operating Temperature T opr -25～85 ℃ Storage Temperature T stg -30～100 ℃ T sol 260℃ for 5 seconds 1 * Peak Forward Current Reverse Voltage 2 * Soldering Temperature *1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Keep the distance more than 2.0mm from PCB to the bottom of LED package Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward Voltage VF IF = 10mA - 3.7 4.2 V Luminous Intensity IV IF = 10mA 10 30 - mcd Peak Wavelength λP IF = 10mA - 435 - nm Δλ IF = 10mA - 60 - nm IR VR =4V - - 10 uA θ1/2 IF = 10mA - ±17 - deg Spectrum Bandwidth Reverse Current 3 * Half angle *3. θ1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity KLB-1001-000 2 SB3411 / SB3411-(B) Characteristic Diagrams Fig. 2 IV - IF Forward Current IF [mA] Luminous Intensity Iv [mcd] Fig. 1 IF - VF Forward Voltage VF [V] Forward Current IF [mA] Fig.4 Spectrum Distribution Relative Intensity [%] Forward Current IF [mA] Fig. 3 IF – Ta Ambient Temperature Ta [℃] Wavelength λ [nm] Fig. 5 Radiation Diagram Relative Luminous Intensity Iv [%] KLB-1001-000 3