SB5311 / SB5311(B) Semiconductor LED Lamp Features • Colorless transparency lens type • φ5mm(T-13/4) all plastic mold type Outline Dimensions unit : STRAIGHT TYPE mm STOPPER TYPE 5.0±0.2 5.0±0.2 8.6±0.2 8.6±0.2 0.8±0.2 0.5 0.8±0.2 0.5 1.0MIN 1.0MIN 23.0 MIN 2.54NOM 0.5 0.5 2.54NOM 1 2 5.8±0.2 1 2 5.8±0.2 PIN Connections 1.Anode 2.Cathode KLB-9001-002 1 SB5311 / SB5311(B) Absolute maximum ratings Characteristic Symbol Ratings Unit Power Dissipation PD 85 mW Forward Current IF 20 mA IFP 50 mA Reverse Voltage VR 4 V Operating Temperature Topr -25∼85 ℃ Storage Temperature Tstg -30∼100 ℃ 1 * Peak Forward Current 2 260℃ for 5 seconds * Soldering Temperature Tsol *1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Keep the distance more than 2.0mm from PCB to the bottom of LED package Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward Voltage VF IF= 10mA - 3.7 4.2 V Luminous Intensity IV IF= 10mA 30 75 - mcd λP Δλ IR IF= 10mA - 435 - nm IF= 10mA - 60 - nm VR=4V - - 10 uA θ1/2 IF= 10mA - ±11 - deg Peak Wavelength Spectrum Bandwidth Reverse Current 3 * Half angle *3. θ1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity KLB-9001-002 2 SB5311 / SB5311(B) Characteristic Diagrams Fig. 2 IV - IF Forward Current IF [mA] Luminous Intensity Iv [mcd] Fig. 1 IF - VF Forward Voltage VF [V] Forward Current IF [mA] Fig.4 Spectrum Distribution Forward Relative Intensity [%] Current IF [mA] Fig. 3 IF – Ta Ambient Temperature Ta [℃] Wavelength λ [nm] Fig. 5 Radiation Diagram Relative Luminous Intensity Iv [%] KLB-9001-002 3