SBT3906F Semiconductor PNP Silicon Transistor Descriptions • General small signal application • Switching application Features • Low collector saturation voltage • Collector output capacitance • Complementary pair with SBT3904F Ordering Information Type NO. Marking Package Code SBT3906F 2A SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1.90 BSC KST-2084-001 0.9±0.1 0.15±0.05 2 0.4±0.05 3 0~0.1 2.9±0.1 1 PIN Connections 1. Base 2. Emitter 3. Collector 1 SBT3906F Ta=25°°C Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -40 V Collector-Emitter voltage VCEO -40 V Emitter-base voltage VEBO -5 V IC -200 mA 350 mW Tj 150 °C Tstg -55~150 °C Collector current Collector dissipation PC Junction temperature Storage temperature range * * : Package mounted on 99.5% alumina 10×8×0.6mm Ta=25°°C Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-10µA, IE=0 -40 - - V Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -40 - - V Emitter-Base breakdown voltage BVEBO IE=-10µA, IC=0 -5 - - V Collector cut-off current ICEX VCE=-30V, VEB=-3V - - -50 nA DC current gain hFE VCE=-1V, IC=-10mA 100 - 300 - VCE(sat) IC=-50mA, IB=-5mA - - -0.4 V fT VCE=-20V, IC=-10mA, f=100MHz 250 - - MHz VCB=-5V, IE=0, f=1MHz - - 4.5 pF VCC=-3Vdc, VBE(off)=-0.5Vdc, IC=-10mAdc, IB1=-1mAdc - - 35 ns - - 35 ns - - 225 ns - - 75 ns Collector-Emitter saturation voltage Transition frequency Collector output capacitance Cob Delay time td Rise time tr Storage time ts Fall Time tf VCC=-3Vdc,IC=-10mAdc, IB1=IB2=-1mAdc KST-2084-001 2 SBT3906F Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 2 hFE-IC Fig. 3 VCE(sat)-IC KST-2084-001 3