SDT05H Semiconductor TVS Diode Features • • • • Transient protection for data lines to IEC61000-4-2(ESD) 15KV(air), 8KV(contact ) Small package for use in portable electronics Low operating and clamping voltage Protects five I/O lines Applications • Cell phone Handsets and Accessories • Microprocessor based equipment • Notebooks, Desktops and Servers Ordering Information Type NO. SDT05H Marking Package Code H05 SOT-353 Outline Dimensions unit : mm 2.1 BSC 1.25 BSC 5 3 4 0.25 Min. 0.1~0.25 1 0~0.1 0.9±0.1 0.15~0.30 2 2.0 BSC 5 1.30 BSC 1 4 KSD-5002-000 2 3 PIN Connections 1. Cathode 2. Anode 3. Cathode 4. Cathode 5. Cathode 1 SDT05H Absolute maximum ratings Characteristic Ta=25°C Symbol Ratings Unit Peak pulse power ( tp = 8/20 ㎲ ) PPK 200 W Peak pulse current (tp = 8/20 ㎲ ) IPP 12 A Peak forward voltage(IF=1A, tp = 8/20 ㎲) VFP 1.5 V Lead soldering temperature TL 260 (10sec. ) °C Operating temperature TJ -55 ~ 125 °C Tstg -55 ~ 150 °C Storage temperature Ta=25°°C Electrical Characteristics Characteristic Reverse stand-off voltage Reverse breakdown voltage Symbol Test Condition Min. Typ. Max. VRWM VBR 5 It=1mA 6 Unit V V Reverse leakage current IR VRWM=5V , T=25℃ 10 ㎂ Clamping voltage VC IPP=1A, tp=8/20 ㎲ 9.5 V Clamping voltage VC IPP=12A, tp=8/20 ㎲ 12.5 V Junction capacitance CJ Between I/O pins and Gnd VR=0V, f=1MHz 150 pF KSD-5002-000 2 SDT05H Electrical Characteristics Curves Fig. 1 None-repetitive peak pulse power vs pulse time Fig. 2 Power derating curve Fig. 4 Clamping voltage vs peak pulse current Fig. 3 Pulse Waveform Fig. 5 Capacitance vs Reverse voltage KSD-5002-000 3