SG5311 / SG5311(B) Semiconductor LED Lamp Features • Colorless transparency lens type • φ5mm(T-13/4) all plastic mold type • Low power consumption Outline Dimensions unit : STRAIGHT TYPE mm STOPPER TYPE 5.0±0.2 5.0±0.2 8.6±0.2 8.6±0.2 0.8±0.2 0.5 0.8±0.2 0.5 1.0MIN 1.0MIN 23.0 MIN 2.54NOM 0.5 0.5 2.54NOM 1 2 5.8±0.2 1 2 5.8±0.2 PIN Connections 1.Anode 2.Cathode KLG-2001-000 1 SG5311 / SG5311(B) Absolute maximum ratings Characteristic Symbol Ratings Unit Power Dissipation PD 80 mW Forward Current IF 30 mA IFP 50 mA Reverse Voltage VR 4 V Operating Temperature Topr -25∼85 ℃ Storage Temperature Tstg -30∼100 ℃ 1 * Peak Forward Current 2 260℃ for 5 seconds * Soldering Temperature Tsol *1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Keep the distance more than 2.0mm from PCB to the bottom of LED package Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward Voltage VF IF= 20mA - 2.1 2.7 V Luminous Intensity IV IF= 20mA 27 60 155 mcd λP Δλ IR IF= 20mA - 557 - nm IF= 20mA - 25 - nm VR=4V 10 - - uA θ1/2 IF= 20mA - ±11 - deg Peak Wavelength Spectrum Bandwidth Reverse Current 3 * Half angle *3. θ1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity *4. Luminous Intensity Maximum tolerance for each Grade Classification limit is ±18% *4. Luminous Intensity classification I J 27~43 43~68 K L 68~100 100~155 KLG-2001-000 2 SG5311 / SG5311(B) Characteristic Diagrams Fig. 1 IF - VF Forward Current IF [mA] Luminous Intensity Iv [mcd] Fig. 2 IV - IF Forward Voltage VF [V] Forward Fig. 3 IF – Ta Current IF [mA] Forward Relative Intensity [%] Current IF [mA] Fig.4 Spectrum Distribution Ambient Temperature Ta [℃] Wavelength λ [nm] Fig. 5 Radiation Diagram Relative Luminous Intensity Iv [%] KLG-2001-000 3