SPI5842 Semiconductor Photo Diode Features • Peak sensitivity wavelength matching with infrared LED(λP=950nm) • 4.8mm × 5.5mm side view package • Black colored visible light cut-off lens Application • Infrared remote controllers for TVs, VCRs, Audio equipment etc Outline Dimensions unit : mm 4.8±0.2 3.65±0.2 1.75 5.55±0.2 5.6±0.2 0.6 18.0±1.0 Typ.0.5 2.54 ① ② PIN Connections 1. Anode 2.Cathode KPE-0001-000 1 SPI5842 Absolute maximum ratings Characteristic Symbol Ratings Unit Reverse Voltage VR 40 V Power Dissipation PD 170 mW Operating Temperature Topr -20～70 ℃ Storage Temperature Tstg -25～85 ℃ Tsol 260℃ for 5 seconds 1 * Soldering Temperature *1.Keep the distance more than 2.0mm from PCB to the bottom of Photo Diode package Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit * Short Circuit Current ISC Ee=6mW/㎠ - 40 - uA Dark Current ID VR=10V - - 50 nA Capacitance Ct VR=10V, f=1MHz - 10 - pF Δλ - λP - - 940 - nm 1 - - ±55 - deg 1 Spectral Sensitivity Peak Sensitivity Wavelength Half angle θ /2 840 ~ 1,050 nm *1. Ee : Irradiance by infrared LED light source(λp=940nm) KPE-0001-000 2 SPI5842 Characteristic Diagrams Fig. 2 ID - Ta Dark Current ID [nA] Short Current ISC [uA] Fig. 1 ISC - Ee Light Source [mW/㎠] Ambient Temperature Ta [℃] Fig.4 ID – VR Capacitance [Pf] Dark Current ID [nA] Fig. 3 Ct – VR Reverse Voltage [v] Reverse Voltage [v] Fig. 5-1 Radiation Diagram Relative Intensity [%] Fig.5 Spectrum Sensitivity Relative Luminous Intensity Iv [%] Wavelength λ [nm] KPE-0001-000 3