SR3517-U / SR3517-U(B) Semiconductor High Brightness LED Lamp Features • Red colored diffusion lens type • φ3mm(T-1) all plastic mold type • Ultra luminosity Outline Dimensions unit : STRAIGHT TYPE mm STOPPER TYPE 3.0±0.2 0.2 5.3±0.2 5.3±0.2 2.9±0.2 2.9±0.2 5.2±0.5 0.4 23.0MIN 0.4 23.0MIN 1.0MIN 1.0MIN 2.54 NOM 2.54 NOM 1 2 3.8±0.2 3.6±0.2 1 2 3.8±0.2 3.6±0.2 PIN Connections 1. Cathode 2. Anode 1 SR3517-U / SR3517-U(B) Absolute maximum ratings Characteristic Symbol Ratings Unit Power Dissipation PD 75 mW Forward Current IF 30 mA IFP 50 mA Reverse Voltage VR 3 V Operating Temperature Topr -25∼85 °C Storage Temperature Tstg -30∼100 °C 1 * Peak Forward Current 2 * Soldering Temperature Tsol 260°C for 3 seconds *1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Keep the distance more than 2.0mm from PCB to the bottom of LED package Electrical Characteristics Characteristic Symbol Test Condition Forward Voltage VF IF= 20mA - 1.85 2.3 V Luminous Intensity IV IF= 20mA 230 400 780 mcd λP Δλ IR IF= 20mA - 660 - nm IF= 20mA - 20 - nm VR=4V - - 10 uA IF= 20mA - ±25 - deg Peak Wavelength Spectrum Bandwidth Reverse Current 3 * Half Angle θ1/2 Min. Typ. Max. Unit *3. θ1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity 2 SR3517-U / SR3517-U(B) Characteristic Diagrams Fig. 1 IF - VF Luminous Intensity Iv [mcd] Forward Current IF [mA] Fig. 2 IV - IF Forward Voltage VF [V] Forward Fig. 3 IF – Ta Current IF [mA] Forward Relative Intensity [%] Current IF [mA] Fig.4 Spectrum Distribution Ambient Temperature Ta [℃] Wavelength λ [nm] Fig. 5 Radiation Diagram Relative Luminous Intensity [%] 3