ST5811 Semiconductor Photo Transistor Features • • • • Lensed for high sensitivity φ5mm(T-13/4) all plastic mold type High reliability and stable characteristics Visible light cut-off type Outline Dimensions unit : mm 5.0 7.8 8.6 2 0.5 21.0MIN 1.0MIN 2.54NOM 1 1 2 5.8 PIN Connections 1. Emitter 2.Collector KPT-0003-000 1 ST5811 Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Emitter Voltage VCEO 35 V Emitter-Collector Voltage VECO 6 V Collector Current IC 20 mA Collector Power Dissipation PD 75 mW Operating Temperature Topr -25～85 ℃ Storage Temperature Tstg -30～100 ℃ Tsol 260℃ for 5 seconds 1 * Soldering Temperature *1. Keep the distance more than 2.0mm from PCB to the bottom of LED package Electrical Characteristics Characteristic Symbol Test Condition Min Typ Max ICEO VCEO=10V, Ee=0 - 0.05 0.5 uA ICEL VCE=5V, Ee≒1mW/㎠ - 4.5 - mA VCE(sat) IC=0.5mA, Ee≒1mW/㎠ - 0.2 - V Rise Time tr Fall Time tf VCC=10V, IC=1mA R1=100Ω - - us Spectral Sensitivity λ - Peak Sensitivity Wavelength λP - - 880 - nm θ1/2 IF= 20mA - ±20 - deg Current Dark Current *3Light Current Current-Emitter Saturation Voltage Switching Time Half angle 2.5 3.8 700 ~ 1000 Unit nm *1. Tolerance = ±30% KPT-0003-000 2 ST5811 Characteristic Diagrams Fig. 1 ICEL - Ee Fig. 2 ICEL - VCE 10 2 Ee=2.0mw/ m Light Current ICEL [mA] Light Current ICEL [mA] 50 30 10 5 3 1 2 8 Ee=1.5mw/ m 6 2 Ee=1.0mw/ m 2 Ee=0.8mw/ m 4 2 Ee=0.6mw/ m 2 Ee=0.4mw/ m 2 2 Ee=0.2mw/ m 0.5 0.3 0.03 0.05 0.1 0.3 0.5 1 3 5 0 0 10 2 Irradiance Ee [㎽/㎠] 4 6 8 10 12 Collector-Emitter Voltage VCE [V] Fig.4 ICEO – Ta Fig. 3 PD – Ta 1 Collector Dark Current ICEO [㎃] Power Dissipation PD [mW] 100 80 60 40 20 10 0 10 -1 10 -2 10 -3 0 -20 0 20 40 60 80 10 100 Ambient Temperature Ta [℃] -20 0 20 40 60 80 100 Ambient Temperature Ta [℃] Fig. 5 Spectrum Sensitivity Fig. 5 Sensitivity Diagram Relative Intensity [%] 100 80 60 40 20 100 0 600 700 800 900 Wavelength λ [nm] 1000 50 0 50 100 1100 Relative Luminous Intensity Iv [%] KPT-0003-000 3