STA124SF Semiconductor PNP Silicon Transistor Features • Suitable for low voltage large current drivers • High DC current gain and large current capability • Complementary pair with STD123SF Ordering Information Type NO. Marking STA124SF Package Code 124 SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1.90 BSC 0.9±0.1 0.15±0.05 2 0.4±0.05 3 0~0.1 2.9±0.1 1 KST-2124-001 PIN Connections 1. Base 2. Emitter 3. Collector 1 STA124SF Absolute maximum ratings (Ta=25°°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -15 V Collector-Emitter voltage VCEO -12 V Emitter-Base voltage VEBO -6.5 V IC -1 A 350 mW Collector current Collector dissipation PC * Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C * : Package mounted on 99.5% alumina 10×8×0.1mm Electrical Characteristics Characteristic (Ta=25°°C) Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-50µA, IE=0 -15 - - V Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -12 - - V Emitter-Base breakdown voltage BVEBO IE=-50µA, IC=0 -6.5 - - V Collector cut-off current ICBO VCB=-15V, IE=0 - - -0.1 µA Emitter cut-off current IEBO VEB=-6V, IC=0 - - -0.1 µA DC current gain hFE VCE=-1V, IC=-100mA 200 - 450 - IC=-500mA, IB=-50mA - -0.2 -0.4 V VCE=-5V, IC=-50mA - 260 - MHz VCB=-10V, IE=0, f=1MHz - 5 - pF Collector-Emitter saturation voltage Transistor frequency Collector output capacitance VCE(sat) fT Cob KST-2124-001 2 STA124SF Fig. 1 PC - Ta Fig. 3 hFE-IC Fig. 2 IC - VBE Fig. 4 VCE(sat)-IC KST-2124-001 3