STA124S Semiconductor PNP Silicon Transistor Features • Suitable for low voltage large current drivers • High DC current gain and large current capability • Complementary pair with STD123S Ordering Information Type NO. Marking STA124S Package Code 124 SOT-23 Outline Dimensions unit : mm 2.4±0.1 1.30±0.1 2.9±0.1 1.90 Typ. 1 3 0.4 Typ. 2 0.45~0.60 -0.03 0.124 +0.05 0~0.1 0.38 1.12 Max. 0.2 Min. KST-2100-000 PIN Connections 1. Base 2. Emitter 3. Collector 1 STA124S Absolute maximum ratings (Ta=25° C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -15 V Collector-Emitter voltage VCEO -12 V Emitter-Base voltage VEBO -6.5 V IC -1 A 350 mW Collector current * Collector dissipation PC Junction temperature Tj 150 °C Storage temperature T stg -55~150 °C * : Package mounted on 99.5% alumina 10×8×0.1mm Electrical Characteristics Characteristic (Ta=25° C) Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-50µA, I E =0 -15 - - V Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -12 - - V Emitter-Base breakdown voltage BVEBO IE =-50µA, IC =0 -6.5 - - V Collector cut-off current ICBO VCB=-15V, I E =0 - - -0.1 µA Emitter cut-off current IEBO VEB =-6V, IC =0 - - -0.1 µA DC current gain h FE VCE=-1V, IC =-100mA 200 - 450 - IC=-500mA, IB =-50mA - -0.2 -0.4 V VCE=-5V, IC =-50mA - 260 - MHz VCB=-10V, I E =0, f=1MHz - 5 - pF Collector-Emitter saturation voltage Transistor frequency Collector output capacitance VCE(sat) fT C ob KST-2100-000 2 STA124S Fig. 1 PC - Ta Fig. 3 hFE- IC Fig. 2 IC - VBE Fig. 4 VCE(sat)-IC KST-2100-000 3