STB1132 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC(Collector dissipation)=2W(Ceramic substate of 40×40×0.8mm used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664 Ordering Information Type NO. Marking STB1132 Package Code SOT-89 A1 : hFE rank, monthly code Outline Dimensions unit : 4.0 0.50±0.1 2.5 mm -0.3 +0.5 -0.3 +0.2 1.00±0.3 KST-8001-002 -0.02 +0.04 0.42 0~0.1 1.5 -0.1 +0.2 0.42±0.05 1 0.15 Typ. 2 0.52±0.05 4.5 -0.1 +0.2 1.82±0.05 3 PIN Connections 1. Base 2. Collector 3. Emitter 1 STB1132 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -40 V Collector-Emitter voltage VCEO -32 V Emitter-Base voltage VEBO -5 V IC -1 A PC 0.5 Collector current Collector dissipation * W PC 2 Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C * : When mounted on 40×40×0.8mm ceramic substate Electrical Characteristics Characteristic (Ta=25°C) Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-50µA, IE=0 -40 - - V Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -32 - - V Emitter-Base breakdown voltage BVEBO IE=-50µA, IC=0 -5 - - V Collector cut-off current ICBO VCB=-20V, IE=0 - - -0.1 µA Collector cut-off current ICES VCE=-30V, IC=0 - - -0.1 µA Emitter cut-off current IEBO VEB=-4V, IC=0 - - -0.1 µA DC current gain hFE* VCE=-3V, IC=-0.1A 100 - 320 - Collector-Emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) fT Cob IC=-500mA, IB=-50mA - -0.2 -0.8 V VCE=-5V, IC=-50mA, f=30MHz - 150 - MHz VCB=-10V, IE=0, f=1MHz - 20 30 pF * : hFE rank / O : 100 ~ 200, Y : 160 ~ 320 KST-8001-002 2 STB1132 Electrical Characteristic Curves Fig. 1 PC - Ta Fig. 2 IC - VBE Fig. 3 IC - VCE Fig. 5 hFE - Fig. 4 VCE(sat) - IC IC KST-8001-002 3