STC128M Semiconductor NPN Silicon Transistor Features • • • • • Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability Low on resistance : RON=0.6Ω(Max.) (IB=1mA) Ordering Information Type NO. STC128M Marking Package Code C128 TO-92M Outline Dimensions unit : mm 3.0±0.1 4.0±0.1 0.44 REF 14.0±0.40 0.52 REF 1.27 Typ. 2.54±0.1. 2 3 3.0±0.1 3.8 Min. KST-1003-000 0.42 Typ. 0.7 Typ. 1 PIN Connections 1. Emitter 2. Collector 3. Base 1 STC128M Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 20 V Collector-Emitter voltage VCEO 15 V Emitter-base voltage VEBO 6.5 V Collector current IC 1 A Collector dissipation PC 400 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO IC=50µA, IE=0 20 - - V Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 15 - - V Emitter-base breakdown voltage BVEBO IE=50µA, IC=0 6.5 - - V Collector cut-off current ICBO VCB=20V, IE=0 - - 0.1 µA Emitter cut-off current IEBO VEB=6V, IC=0 - - 0.1 µA DC current gain hFE VCE=1V, IC=100mA 150 - - - IC=500mA, IB=50mA - 0.1 0.3 V VCE=5V, IC=50mA - 260 - MHz Collector-Emitter saturation voltage Transistor frequency VCE(sat) fT Collector output capacitance Cob VCB=10V, IE=0, f=1MHz - 5 - pF On resistance RON f=1KHz, IB=1Ma, VIN=0.3V - 0.6 - Ω KST-1003-000 2 STC128M Electrical Characteristic Curves Fig. 1 PC –Ta Fig. 3 hFE-IC Fig. 1 COb-VCB Fig. 1 VCE(sat)-IC Fig. 4 RON-IB KST-1003-000 3