STC722D Semiconductor NPN Silicon Transistor Description • General purpose amplifier • D-PAK for surface mount applications Features • PC(Collector dissipation)=15W • Low speed switching applications • Complementary pair with STA723D Ordering Information Type NO. Marking Package Code STC722D STC722 D-PAK Outline Dimensions unit : mm PIN Connections 1. Base 2. Collector 3. Emitter KST-D002-001 1 STC722D Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 40 V Collector-Emitter voltage VCEO 30 V Emitter-Base voltage VEBO 5 V Collector current IC 3 A Collector dissipation PC 15 W Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics Characteristic (Ta=25°C) Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=50µA, IE=0 40 - - V Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 30 - - V Emitter-Base breakdown voltage BVEBO IC=50µA, IC=0 5 - - V Collector cut-off current ICBO VCB=20V, IE=0 - - 1 µA Emitter cut-off current IEBO VEB=4V, IC=0 - - 1 µA DC current gain hFE VCE=3V, IC=500mA 80 - 390 VCE=3V, IC=3A 10 - - Collector-Emitter saturation voltage Transition frequency Collector output capacitance - VCE(sat) VCE=2A, IC= 200mA - 0.5 0.8 V fT VCE=5V, IC=500mA, f=1MHz - 120 - MHz VCB=10V, IE=0, f=1MHz - 13 - pF Cob * : hFE rank / O : 80~218, Y : 120~270, G : 180~390 KST-D002-001 2 STC722D Electrical Characteristic Curves Fig. 1 hFE - IC Fig. 3 fT - IC Fig. 2 VCE(sat) - IC Fig. 4 COb - VR KST-D002-001 3