STD123ASF Semiconductor NPN Silicon Transistor Features • High β& low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA • Suitable for large current drive directly. • Application for IRED Drive transistor in remote transmitter. Ordering Information Type NO. Marking STD123ASF Package Code 12A SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1.90 BSC 0.9±0.1 0.15±0.05 2 0.4±0.05 3 0~0.1 2.9±0.1 1 KST-2029-001 PIN Connections 1. Base 2. Emitter 3. Collector 1 STD123ASF Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 10 V Collector-Emitter voltage VCEO 6 V Emitter-Base voltage VEBO 3 V Collector current IC 1 A Collector dissipation PC* 350 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C * : Package mounted on 99.5% alumina 10×8×0.1mm Electrical Characteristics Characteristic (Ta=25°C) Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=50µA, IE=0 10 - - V Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 6 - - V Emitter-Base breakdown voltage BVEBO IE=50µA, IC=0 3 - - V Collector cut-off current ICBO VCB=10V, IE=0 - - 0.1 µA Emitter cut-off current IEBO VEB=3V, IC=0 - - 0.1 µA DC current gain hFE VCE=1V, IC=100mA 400 - - - IC=500mA, IB=50mA - 0.1 0.3 V VCE=5V, IC=50mA - 260 - MHz Collector-Emitter saturation voltage Transistor frequency VCE(sat) fT Collector output capacitance Cob VCB=10V, IE=0, f=1MHz - 5 - pF On resistance RON f=1KHz, IB=1mA, VIN=0.3V - 0.6 - Ω KST-2029-001 2 STD123ASF Electrical Characteristic Curves Fig. 1 PC - Ta Fig. 3 COb-VCB Fig. 2 VCE(sat)-IC Fig. 4 hFE-IC Fig. 5 RON-IB KST-2029-001 3