STD123S Semiconductor NPN Silicon Transistor Features • • • • • Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability Low on resistance : RON=0.6Ω(Max.) (IB=1mA) Ordering Information Type NO. Marking STD123S Package Code 123 SOT-23 Outline Dimensions unit : mm 2.4±0.1 1.30±0.1 2.9±0.1 1.90 Typ. 1 3 0.4 Typ. 2 0.45~0.60 -0.03 0.124 +0.05 0~0.1 0.38 1.12 Max. 0.2 Min. KST-2059-002 PIN Connections 1. Base 2. Emitter 3. Collector 1 STD123S (Ta=25°°C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 20 V Collector-Emitter voltage VCEO 15 V Emitter-Base voltage VEBO 6.5 V IC 1 A 350 mW Collector current Collector dissipation PC * Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C * : Package mounted on 99.5% alumina 10×8×0.1mm (Ta=25°°C) Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=50µA, IE=0 20 - - V Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 15 - - V Emitter-Base breakdown voltage BVEBO IE=50µA, IC=0 6.5 - - V Collector cut-off current ICBO VCB=20V, IE=0 - - 0.1 µA Emitter cut-off current IEBO VEB=6V, IC=0 - - 0.1 µA DC current gain hFE VCE=1V, IC=100mA 150 - - - IC=500mA, IB=50mA - 0.1 0.3 V VCE=5V, IC=50mA - 260 - MHz Collector-Emitter saturation voltage Transistor frequency VCE(sat) fT Collector output capacitance Cob VCB=10V, IE=0, f=1MHz - 5 - pF On resistance RON f=1KHz, IB=1mA, VIN=0.3V - 0.6 - Ω KST-2059-002 2 STD123S Electrical Characteristic Curves Fig. 1 PC - Ta Fig. 2 COb-VCB Fig. 2 VCE(sat)-IC Fig. 4hFE-IC Fig. 5 RON-IB KST-2059-002 3