STJ828M Semiconductor P-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch application. Features • -2.5V Gate drive. • Low threshold voltage : Vth = -0.5~ -1.5V. • High speed. Ordering Information Type NO. Marking STJ828M Package Code J828 TO-92M Outline Dimensions unit : mm 3.0±0.1 4.0±0.1 0.44 REF 2.15 Typ. 14.0±0.40 11.85 Typ. 0.52 REF 1.27 Typ. 2.54 ± 0.1. 3.0±0.1 3.8 Min. KST-I016-000 0.42 Typ. 0.7 Typ. 2.3±0.1. PIN Connections 1. Source 2. Drain 3. Gate 1 STJ828M Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Drain-Source voltage VDS -20 V Gate-Source voltage VGSS ±7 V DC Drain current ID -50 mA Drain Power dissipation PD 400 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics Characteristic Drian-Source breakdown voltage (Ta=25°C) Symbol BVDSS Test Condition Min. Typ. Max. ID=-100µA, VGS=0 -20 -0.5 Gate-Threshold voltage Vth ID=-0.1mA, VDS=-3V Drain cut-off current IDSS Gate leakage current IGSS Unit V -1.5 V VDS=-20V, VGS=0 -1 µA VGS=±7V, VDS=0 ±1 µA 40 Ω Drain-Source on-resistance RDS(ON) VGS=-2.5V, ID=-10mA Forward transfer admittance ｜Yfs｜ VDS=-3V, ID=-10mA 15 mS Input capacitance Ciss VDS=-3V, VGS=0, f=1MHz 10.4 pF Output capacitance Coss VDS=-3V, VGS=0, f=1MHz 8.4 pF Reverse Transfer capacitance Crss VDS=-3V, VGS=0, f=1MHz 2.8 pF 0.15 ㎲ 0.13 ㎲ Turn-on time tON Turn-off time tOFF VDD=-3V, ID=-10mA VGEN=0~-2.5V VDD=-3V, ID=-10mA VGEN=0~-2.5V *. Switching Time Test Circuit = Ω KST-I016-000 2 STJ828M Electrical Characteristic Curves Fig2 ID - VDS Fig1 ID - VDS ℃ ℃ Fig4 ID - VGS Fig3 IDR - VDS ℃ 100℃ - ℃ ℃ Fig5 Yfs - ID Fig6 C - VDS ℃ ℃ KST-I016-000 3 STJ828M Fig7 VDS(on) - ID Fig8 t - ID - G ℃ Ω ℃ Fig. 9 PD - Ta KST-I016-000 4