STK1828K Semiconductor N-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch application. Features • 2.5V Gate drive. • Low threshold voltage : Vth = 0.5~1.5V. • High speed. Ordering Information Type NO. Marking Package Code STK1828K 8K SOT-623F Outline Dimensions unit : mm PIN Connections 1. Gate 2. Source 3. Drain KST-4011-000 1 STK1828K Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS 10 V DC Drain current ID 50 mA Drain Power dissipation PD 100 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics Characteristic Drain-Source breakdown voltage (Ta=25°C) Symbol BVDSS Test Condition Min. Typ. Max. ID=100µA, VGS=0 20 0.5 Gate-Threshold voltage Vth ID=0.1mA, VDS=3V Drain cut-off current IDSS Gate leakage current IGSS Unit V 1.5 V VDS=20V, VGS=0 1 µA VGS=10V, VDS=0 1 µA 20 Ω Drain-Source on-resistance RDS(ON) VGS=2.5V, ID=10mA Forward transfer admittance ｜Yfs｜ VDS=3V, ID=10mA 10 20 mS Input capacitance Ciss VDS=3V, VGS=0, f=1MHz 5.5 pF Output capacitance Coss VDS=3V, VGS=0, f=1MHz 6.5 pF Reverse Transfer capacitance Crss VDS=3V, VGS=0, f=1MHz 1.6 pF 0.14 ㎲ 0.14 ㎲ Turn-on time tON Turn-off time tOFF VDD=3V, ID=10mA VGEN=0~2.5V VDD=3V, ID=10mA VGEN=0~2.5V KST-4011-000 2 STK1828K Electrical Characteristic Curves Fig.2 PD - Ta Fig.1 ID - VDS ℃ Fig.4 ID - VGS Fig.3 IDR - VDS ℃ 155℃ - ℃ ℃ Fig.5 │Yfs│- ID Fig.6 C - VDS ℃ │ │ ℃ KST-4011-000 3 STK1828K Electrical Characteristic Curves Fig.7 VDS - ID Fig.8 t - ID Ω ℃ ℃ KST-4011-000 4