STS9012 Semiconductor PNP Silicon Transistor Description • General purpose application. • Switching application. Features • Excellent hFE linearity. • Complementary pair with STS9013 Ordering Information Type NO. Marking STS9012 STS9012 Package Code TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 4.5±0.1 2.25±0.1 2.06±0.1 14.0±0.40 0.4±0.02 1.27 Typ. 2.54 Typ. PIN Connections 1. Emitter 2. Base 3. Collector 0.38 1.20±0.1 1 2 3 KST-9015-000 1 STS9012 (Ta=25°°C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -40 V Collector-Emitter voltage VCEO -30 V Emitter-Base voltage VEBO -5 V Collector current IC -500 mA Emitter current IE 500 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C (Ta=25°°C) Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector cut-off current ICBO VCB=-35V, IE=0 - - -0.1 µA Emitter cut-off current IEBO VEB=-5V, IC=0 - - -0.1 µA DC current gain hFE* VCE=-1V, IC=-50mA 96 - 246 - IC=-100mA, IB=-10mA - -0.1 -0.25 V VCE=-1V, IC=-100mA - -0.8 -1.0 V 150 - - MHz - 7 - pF Collector-Emitter saturation voltage VCE(sat) Base-Emitter voltage VBE Transistor frequency fT Collector output capacitance * Cob VCE=-6V, IC=-20mA VCB=-6V, f=1MHz : hFE rank / F : 96~135, G : 118~166, H : 144~202, I : 176~246. KST-9015-000 2 STS9012 Electrical Characteristic Curves Fig. 1 PC - Ta Fig. 2 IC - VBE Fig. 3 I C - VCE Fig. 4 VCE(sat) - IC Fig. 5 hFE - IC Fig. 6 hFE - KST-9015-000 IC 3