SUF621EF Semiconductor N-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch application. Features • 2.5V Gate drive. • Low threshold voltage : Vth = 0.5~1.5V. • Two STK1828 Chips in SOT-563F Package. Ordering Information Type NO. Marking Package Code SUF621EF H SOT-563F Outline Dimensions unit : 3 2 mm 1 Q1 Q2 4 5 6 PIN Connections 1. Source 1 2. Gate 1 3. Drain 2 4. Source 2 5. Gate 2 6. Drain1 KST-J017-000 1 SUF621EF Absolute maximum ratings (Q1,Q2 Common) Characteristic (Ta=25°C) Symbol Ratings Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS 10 V DC Drain current ID 50 mA Drain Power dissipation PD 100 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics Characteristic Drian-Source breakdown voltage (Q1,Q2 Common) Symbol BVDSS Test Condition (Ta=25°C) Min. Typ. Max. ID=100µA, VGS=0 20 0.5 Gate-Threshold voltage Vth ID=0.1mA, VDS=3V Drain cut-off current IDSS Gate leakage current IGSS Unit V 1.5 V VDS=20V, VGS=0 1 µA VGS=10V, VDS=0 1 µA 40 Ω Drain-Source on-resistance RDS(ON) VGS=2.5V, ID=10mA Forward transfer admittance ｜Yfs｜ VDS=3V, ID=10mA 20 20 mS Input capacitance Ciss VDS=3V, VGS=0, f=1MHz 5.5 pF Output capacitance Coss VDS=3V, VGS=0, f=1MHz 6.5 pF Reverse Transfer capacitance Crss VDS=3V, VGS=0, f=1MHz 1.6 pF 0.14 ㎲ 0.14 ㎲ Turn-on time ton Turn-off time toff VDD=3V, ID=10mA VGEN=0~2.5V VDD=3V, ID=10mA VGEN=0~2.5V * Switching Time Test Circuit = Ω KST-J017-000 2 SUF621EF Electrical Characteristic Curves Fig.2 PD - Ta Fig.1 ID - VDS ℃ Fig.4 ID - VGS Fig.3 IDR - VDS ℃ 155 ℃ - ℃ ℃ Fig.5 │Yfs│- ID Fig.6 C - VDS ℃ orward transfer admittance │ │ ℃ KST-J017-000 3 SUF621EF Electrical Characteristic Curves Fig.7 VDS - ID Fig.8 t - ID Ω ℃ ℃ KST-J017-000 4