SUF622EF Semiconductor N-Ch/P-Ch Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch application. Features • STK1828 Chip and STJ828 Chip in SOT-563F Package • Low threshold voltage • High speed. Ordering Information Type NO. Marking Package Code SUF622EF HX SOT-563F Outline Dimensions unit : 3 2 mm 1 Q1 Q2 4 5 6 PIN Connections 1. Source 1 2. Gate 1 3. Drain 2 4. Source 2 5. Gate 2 6. Drain1 KST-J018-000 1 SUF622EF Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Drain-Source voltage VDS 20 -20 V Gate-Source voltage VGSS 10 -7 V DC Drain current ID 50 -50 mA Drain Power dissipation PD 100 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics (Q1:N-CH) Characteristic Drian-Source breakdown voltage Symbol BVDSS (Ta=25°C) Test Condition Min. Typ. Max. ID=100µA, VGS=0 20 0.5 Gate-Threshold voltage Vth ID=0.1mA, VDS=3V Drain cut-off current IDSS Gate leakage current IGSS Unit V 1.5 V VDS=20V, VGS=0 1 µA VGS=10V, VDS=0 1 µA 40 Ω Drain-Source on-resistance RDS(ON) VGS=2.5V, ID=10mA Forward transfer admittance ｜Yfs｜ VDS=3V, ID=10mA 20 20 mS Input capacitance Ciss VDS=3V, VGS=0, f=1MHz 5.5 pF Output capacitance Coss VDS=3V, VGS=0, f=1MHz 6.5 pF Reverse Transfer capacitance Crss VDS=3V, VGS=0, f=1MHz 1.6 pF 0.14 ㎲ 0.14 ㎲ Turn-on time ton Turn-off time toff VDD=3V, ID=10mA VGEN=0~2.5V VDD=3V, ID=10mA VGEN=0~2.5V Electrical Characteristics (Q2:P-CH) Characteristic Drian-Source breakdown voltage Symbol BVDSS (Ta=25°C) Test Condition Min. Typ. Max. ID=-100µA, VGS=0 -20 -0.5 Gate-Threshold voltage Vth ID=-0.1mA, VDS=-3V Drain cut-off current IDSS Gate leakage current IGSS Unit V -1.5 V VDS=-20V, VGS=0 -1 µA VGS=-7V, VDS=0 -1 µA 40 Ω Drain-Source on-resistance RDS(ON) VGS=-2.5V, ID=-10mA Forward transfer admittance ｜Yfs｜ VDS=-3V, ID=-10mA 20 15 mS Input capacitance Ciss VDS=-3V, VGS=0, f=1MHz 10.4 pF Output capacitance Coss VDS=-3V, VGS=0, f=1MHz 8.4 pF Reverse Transfer capacitance Crss VDS=-3V, VGS=0, f=1MHz 2.8 pF Turn-on time ton 0.15 ㎲ Turn-off time toff 0.13 ㎲ VDD=-3V, ID=-10mA VGEN=0~-2.5V VDD=-3V, ID=-10mA VGEN=0~-2.5V KST-J018-000 2 SUF622EF Electrical Characteristic Curves (Q1:N-CH) Fig.2 ID - VDS Fig.1 ID - VDS ℃ ℃ Fig.4 ID - VGS Fig.3 IDR - VDS ℃ 155 ℃ - ℃ ℃ Fig.5 │Yfs│- ID Fig.6 C - VDS ℃ ℃ KST-J018-000 3 SUF622EF Electrical Characteristic Curves Fig.8 t - ID Fig.7 VDS - ID Ω ℃ ℃ Electrical Characteristic Curves (Q2 : P-CH) Fig2 ID - VDS Fig1 ID - VDS ℃ ℃ Fig4 ID - VGS Fig3 IDR - VDS ℃ 100℃ - ℃ ℃ KST-J018-000 4 SUF622EF Fig5 ｜Yfs｜– ID Fig6 C - VDS ℃ Fig7 VDS(on) - ID ℃ Fig8 t - ID - ℃ Ω ℃ KST-J018-000 5