SUR481H Semiconductor NPN/PNP epitaxial planar Silicon Transistor Description • Digital transistor Features • Both SRC1210 chip and SRA2210 chip in SOT-353 package Ordering Information Type NO. Marking SUR481H Package Code X4 SOT-353 Outline Dimensions unit : mm 2.1 BSC 1.25 BSC 3 5 2.0 BSC 4 Tr2 Tr1 R1 4 5 R1 0.25 Min. Tr1 Ω 4.7KΩ Tr2 Ω 4.7KΩ PIN Connections 1. Emitter 1 2. Base 1 3. Emitter 2 4. Collector 2 5. Collector 1 Base 2 0.1~0.25 0~0.1 0.9±0.1 0.15~0.30 2 3 1 R1 1.30 BSC 1 2 KST-5002-000 1 SUR481H (Ta=25°°C) Absolute maximum ratings(Tr1, Tr2) Characteristic Ratings Symbol Tr1 Tr2 Unit Collector-Base Voltage VCBO 50 -50 V Collector-Emitter Voltage VCEO 50 -50 V Emitter-Base Voltage VEBO 10 -5 V Collector Current IC 100 -100 mA Power Dissipation PD 150 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ 150 °C (Ta=25°°C) Electrical Characteristics(Tr1 : NPN) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector Cut-off Current ICBO VCB=50V, IE=0 - - 500 nA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 500 nA DC Current Gain hFE VCE=5V, IC=1mA 120 - - - IC=10mA, IB=0.5mA - 0.1 0.3 V VCE=10V, IC=5mA - 250 - MHz - 4.7 - KΩ Collector-Emitter Saturation Voltage VCE(SAT) * Transition Frequency fT Input Resistance R1 - * : Characteristic of Transistor Only (Ta=25°°C) Electrical Characteristics(Tr2 : PNP) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -500 nA Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -500 nA DC Current Gain hFE VCE=-5V, IC=-1mA 120 - - - IC=-10mA, IB=-0.5mA - -0.1 -0.3 V VCE=-10V, IC=-5mA - 250 - MHz - 4.7 - KΩ Collector-Emitter Saturation Voltage VCE(SAT) * Transition Frequency fT Input Resistance R1 - * : Characteristic of Transistor Only KST-5002-000 2 SUR481H Electrical Characteristic Curves Tr1 : NPN Fig. 1 hFE - IC Fig. 2 VCE(SAT) - IC Tr2 : PNP Fig. 1 hFE - IC Fig. 2 VCE(SAT) - IC KST-5002-000 3