MCP73826 Single Cell Lithium-Ion Charge Management Controller Features Description • Linear Charge Management Controller for Single Lithium-Ion Cells • High Accuracy Preset Voltage Regulation: +1% (max) • Two Preset Voltage Regulation Options: - 4.1V - MCP73826-4.1 - 4.2V - MCP73826-4.2 • Programmable Charge Current • Automatic Cell Preconditioning of Deeply Depleted Cells, Minimizing Heat Dissipation During Initial Charge Cycle • Automatic Power-Down when Input Power Removed • Temperature Range: -20°C to +85°C • Packaging: 6-Pin SOT-23A The MCP73826 is a linear charge management controller for use in space-limited, cost sensitive applications. The MCP73826 combines high accuracy constant voltage, controlled current regulation, and cell preconditioning in a space saving 6-pin SOT-23A package. The MCP73826 provides a stand-alone charge management solution. Applications • • • • • • Single Cell Lithium-Ion Battery Chargers Personal Data Assistants Cellular Telephones Hand Held Instruments Cradle Chargers Digital Cameras Typical Application Circuit MA2Q705 100 m 10 µF 5 100 k NDS8434 6 VSNS 1 VIN SHDN + Single Lithium-Ion - Cell 4 VDRV 2 Then, the MCP73826 enters the final phase, constant voltage. The accuracy of the voltage regulation is better than ±1% over the entire operating temperature range and supply voltage range. The MCP73826-4.1 is preset to a regulation voltage of 4.1V, while the MCP738264.2 is preset to 4.2V. Package Type 6-Pin SOT-23A VBAT 3 GND Following the preconditioning phase, the MCP73826 enters the controlled current phase. The MCP73826 allows for design flexibility with a programmable charge current set by an external sense resistor. The charge current is ramped up, based on the cell voltage, from the foldback current to the peak charge current established by the sense resistor. This phase is maintained until the battery reaches the charge-regulation voltage. The MCP73826 operates with an input voltage range from 4.5V to 5.5V. The MCP73826 is fully specified over the ambient temperature range of -20°C to +85°C. 500 mA Lithium-Ion Battery Charger VIN 5V The MCP73826 charges the battery in three phases: preconditioning, controlled current, and constant voltage. If the battery voltage is below the internal low-voltage threshold, the battery is preconditioned with a foldback current. The preconditioning phase protects the lithium-ion cell and minimizes heat dissipation. 10 µF 6 VSNS SHDN 1 MCP73826 GND 2 VBAT 3 2002-2013 Microchip Technology Inc. MCP73826 5 VIN 4 VDRV DS21705B-page 1 DS21705B-page 2 SHDN VSNS VIN VIN 0.3V CLAMP CHARGE CURRENT FOLDBACK AMPLIFIER – + 12 k VREF (1.2V) CHARGE CURRENT AMPLIFIER SHUTDOWN, REFERENCE GENERATOR + – Value = 352.5K for MCP73826-4.2 NOTE 1: Value = 340.5K for MCP73826-4.1 37.5 k 112.5 k VREF 1.1 k 500 k CHARGE CURRENT CONTROL AMPLIFIER – + VREF VOLTAGE CONTROL AMPLIFIER – + VIN 75 k 75 k 352.5 k (NOTE 1) GND VBAT VDRV MCP73826 Functional Block Diagram 2002-2013 Microchip Technology Inc. MCP73826 1.0 ELECTRICAL CHARACTERISTICS 1.1 Maximum Ratings* PIN FUNCTION TABLE Pin Name 1 SHDN 2 GND Battery Management 0V Reference Current at VDRV .......................................................... +/-1 mA 3 VBAT Cell Voltage Monitor Input Maximum Junction Temperature, TJ.............................. 150°C 4 VDRV Drive Output 5 VIN 6 VSNS VIN ................................................................................... -0.3V to 6.0V All inputs and outputs w.r.t. GND ................-0.3 to (VIN+0.3)V Storage temperature .....................................-65°C to +150°C ESD protection on all pins 4 kV *Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Description Logic Shutdown Battery Management Input Supply Charge Current Sense Input DC CHARACTERISTICS: MCP73826-4.1, MCP73826-4.2 Unless otherwise specified, all limits apply for VIN = [VREG(typ)+1V], RSENSE = 500 mTA = -20°C to +85°C. Typical values are at +25°C. Refer to Figure 1-1 for test circuit. Parameter Sym Min Typ Max Supply Voltage VIN Supply Current IIN Regulated Output Voltage Units Conditions 4.5 — 5.5 V — — 0.5 260 15 560 µA Shutdown, VSHDN = 0V Constant Voltage Mode VREG 4.059 4.158 4.1 4.2 4.141 4.242 V V MCP73826-4.1 only MCP73826-4.2 only Line Regulation VBAT -10 — 10 mV VIN = 4.5V to 5.5V, IOUT = 75 mA Load Regulation VBAT -1 +0.2 1 mV IOUT = 10 mA to 75 mA ILK — 8 — µA VIN=Floating, VBAT=VREG Gate Drive Current IDRV — 0.08 — — 1 — mA mA Sink, CV Mode Source, CV Mode Gate Drive Minimum Voltage VDRV — 1.6 — V Current Sense Gain ACS — 100 — dB (VSNS-VDRV) / VBAT Current Limit Threshold VCS 40 53 75 mV (VIN-VSNS) at IOUT K — 0.43 — A/A Input High Voltage Level VIH 40 — — %VIN Input Low Voltage Level VIL — — 25 %VIN Input Leakage Current ILK — — 1 µA Sym Min Typ Max Units TA -20 — +85 °C Operating Temperature Range TA -40 — +125 °C Storage Temperature Range TA -65 — +150 °C JA — 230 — °C/W Voltage Regulation (Constant Voltage Mode) Output Reverse Leakage Current External MOSFET Gate Drive Current Regulation (Controlled Current Mode) Foldback Current Scale Factor Shutdown Input - SHDN VSHDN = 0V to 5.5V TEMPERATURE SPECIFICATIONS Unless otherwise specified, all limits apply for VIN = 4.5V-5.5V Parameters Conditions Temperature Ranges Specified Temperature Range Thermal Package Resistances Thermal Resistance, 6-Pin SOT-23A 2002-2013 Microchip Technology Inc. 4-Layer JC51-7 Standard Board, Natural Convection DS21705B-page 3 MCP73826 VIN = 5.1V (MCP73826-4.1) VIN = 5.2V (MCP73826-4.2) NDS8434 RSENSE IOUT 22 µF 5 100 k 1 VOUT 6 4 VSNS VDRV VBAT VIN SHDN GND 3 2 22 µF MCP73826 FIGURE 1-1: MCP73826 Test Circuit. DS21705B-page 4 2002-2013 Microchip Technology Inc. MCP73826 2.0 Note: TYPICAL PERFORMANCE CHARACTERISTICS The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, IOUT = 10 mA, Constant Voltage Mode, TA = 25°C. Refer to Figure 1-1 for test circuit. FIGURE 2-1: Output Voltage vs. Output Current (MCP73826-4.2). FIGURE 2-4: Supply Current vs. Output Current. FIGURE 2-2: Output Voltage vs. Input Voltage (MCP73826-4.2). FIGURE 2-5: Supply Current vs. Input Voltage. FIGURE 2-3: Output Voltage vs. Input Voltage (MCP73826-4.2). FIGURE 2-6: Supply Current vs. Input Voltage. 2002-2013 Microchip Technology Inc. DS21705B-page 5 MCP73826 Note: Unless otherwise indicated, IOUT = 10 mA, Constant Voltage Mode, TA = 25°C. Refer to Figure 1-1 for test circuit. FIGURE 2-7: Output Reverse Leakage Current vs. Output Voltage. FIGURE 2-10: Supply Current vs. Temperature. FIGURE 2-8: Output Reverse Leakage Current vs. Output Voltage. FIGURE 2-11: Output (MCP73826-4.2). FIGURE 2-9: FIGURE 2-12: Power-Up / Power-Down. Current Limit Foldback. DS21705B-page 6 Voltage vs. Temperature 2002-2013 Microchip Technology Inc. MCP73826 Note: Unless otherwise indicated, IOUT = 10 mA, Constant Voltage Mode, TA = 25°C. Refer to Figure 1-1 for test circuit. FIGURE 2-13: Line Transient Response. FIGURE 2-15: Load Transient Response. FIGURE 2-14: Line Transient Response. FIGURE 2-16: Load Transient Response. 2002-2013 Microchip Technology Inc. DS21705B-page 7 MCP73826 3.0 PIN DESCRIPTION The descriptions of the pins are listed in Table 3-1. Pin Name 1 SHDN 2 GND 3.4 Drive Output (VDRV) Direct output drive of an external P-channel MOSFET pass transistor for current and voltage regulation. Description Logic Shutdown Battery Management 0V Reference 3.5 Battery Management Input Supply (VIN) A supply voltage of 4.5V to 5.5V is recommended. Bypass to GND with a minimum of 10 µF. 3 VBAT Cell Voltage Monitor Input 4 VDRV Drive Output 3.6 5 VIN Battery Management Input Supply 6 VSNS Charge current is sensed via the voltage developed across an external precision sense resistor. The sense resistor must be placed between the supply voltage (VIN) and the source of the external pass transistor. A 50 m sense resistor produces a fast charge current of 1 A, typically. TABLE 3-1: 3.1 Charge Current Sense Input Pin Function Table. Logic Shutdown (SHDN) Charge Current Sense Input (VSNS) Input to force charge termination, initiate charge, or initiate recharge. 3.2 Battery Management 0V Reference (GND) Connect to negative terminal of battery. 3.3 Cell Voltage Monitor Input (VBAT) Voltage sense input. Connect to positive terminal of battery. Bypass to GND with a minimum of 10 µF to ensure loop stability when the battery is disconnected. A precision internal resistor divider regulates the final voltage on this pin to VREG. DS21705B-page 8 2002-2013 Microchip Technology Inc. MCP73826 4.0 DEVICE OVERVIEW The MCP73826 is a linear charge management controller. Refer to the functional block diagram on page 2 and the typical application circuit, Figure 6-1. 4.1 Charge Qualification and Preconditioning Upon insertion of a battery or application of an external supply, the MCP73826 verifies the state of the SHDN pin. The SHDN pin must be above the logic high level. If the SHDN pin is above the logic high level, the MCP73826 initiates a charge cycle. If the cell is below the preconditioning threshold, 2.4V typically, the MCP73826 preconditions the cell with a scaled back current. The preconditioning current is set to approximately 43% of the fast charge peak current. The preconditioning safely replenishes deeply depleted cells and minimizes heat dissipation in the external pass transistor during the initial charge cycle. 4.2 4.3 Constant Voltage Regulation When the cell voltage reaches the regulation voltage, VREG, constant voltage regulation begins. The MCP73826 monitors the cell voltage at the VBAT pin. This input is tied directly to the positive terminal of the battery. The MCP73826 is offered in two fixed-voltage versions for battery packs with either coke or graphite anodes: 4.1V (MCP73826-4.1) and 4.2V (MCP73826-4.2). 4.4 Charge Cycle Completion The charge cycle can be terminated by a host microcontroller after an elapsed time from the start of the charge cycle. The charge is terminated by pulling the shutdown pin, SHDN, to a logic Low level. Controlled Current Regulation - Fast Charge Preconditioning ends and fast charging begins when the cell voltage exceeds the preconditioning threshold. Fast charge utilizes a foldback current scheme based on the voltage at the VSNS input developed by the drop across an external sense resistor, RSENSE, and the output voltage, VBAT. Fast charge continues until the cell voltage reaches the regulation voltage, VREG. 2002-2013 Microchip Technology Inc. DS21705B-page 9 MCP73826 5.0 DETAILED DESCRIPTION 5.2 Digital Circuitry Refer to the typical application circuit, Figure 6-1. 5.2.1 SHUTDOWN INPUT (SHDN) 5.1 Analog Circuitry 5.1.1 OUTPUT VOLTAGE INPUT (VBAT) The shutdown input pin, SHDN, can be used to terminate a charge anytime during the charge cycle, initiate a charge cycle, or initiate a recharge cycle. The MCP73826 monitors the cell voltage at the VBAT pin. This input is tied directly to the positive terminal of the battery. The MCP73826 is offered in two fixed-voltage versions for single cells with either coke or graphite anodes: 4.1V (MCP73826-4.1) and 4.2V (MCP73826-4.2). 5.1.2 Applying a logic High input signal to the SHDN pin, or tying it to the input source, enables the device. Applying a logic Low input signal disables the device and terminates a charge cycle. In shutdown mode, the device’s supply current is reduced to 0.5 µA, typically. GATE DRIVE OUTPUT (VDRV) The MCP73826 controls the gate drive to an external P-channel MOSFET, Q1. The P-channel MOSFET is controlled in the linear region, regulating current and voltage supplied to the cell. The drive output is automatically turned off when the input supply falls below the voltage sensed on the VBAT input. 5.1.3 SUPPLY VOLTAGE (VIN) The VIN input is the input supply to the MCP73826. The MCP73826 automatically enters a power-down mode if the voltage on the VIN input falls below the voltage on the VBAT pin. This feature prevents draining the battery pack when the VIN supply is not present. 5.1.4 CURRENT SENSE INPUT (VSNS) Fast charge current regulation is maintained by the voltage drop developed across an external sense resistor, RSENSE, applied to the VSNS input pin. The following formula calculates the value for RSENSE: V CS RSENSE = ----------I OUT Where: VCS is the current limit threshold IOUT is the desired peak fast charge current in amps. The preconditioning current is scaled to approximately 43% of IOUT. DS21705B-page 10 2002-2013 Microchip Technology Inc. MCP73826 6.0 APPLICATIONS algorithm for Lithium-Ion cells, controlled current followed by constant voltage. Figure 6-1 depicts a typical stand-alone application circuit and Figure 6-2 depicts the accompanying charge profile. The MCP73826 is designed to operate in conjunction with a host microcontroller or in stand-alone applications. The MCP73826 provides the preferred charge VOLTAGE REGULATED WALL CUBE MA2Q705 RSENSE Q1 NDS8434 IOUT PACK+ 22 k 100 m 10 µF SHDN GND VBAT 100 k 6 1 2 MCP73826 3 5 4 10 µF VSNS + VIN - VDRV PACKSINGLE CELL LITHIUM-ION BATTERY PACK FIGURE 6-1: Typical Application Circuit. PRECONDITIONING PHASE CONTROLLED CURRENT PHASE CONSTANT VOLTAGE PHASE REGULATION VOLTAGE (VREG) CHARGE VOLTAGE REGULATION CURRENT (IOUT(PEAK)) TRANSITION THRESHOLD PRECONDITION CURRENT CHARGE CURRENT FIGURE 6-2: Typical Charge Profile. 2002-2013 Microchip Technology Inc. DS21705B-page 11 MCP73826 6.1 Application Circuit Design Due to the low efficiency of linear charging, the most important factors are thermal design and cost, which are a direct function of the input voltage, output current and thermal impedance between the external P-channel pass transistor, Q1, and the ambient cooling air. The worst-case situation is when the output is shorted. In this situation, the P-channel pass transistor has to dissipate the maximum power. A trade-off must be made between the charge current, cost and thermal requirements of the charger. 6.1.1 EXTERNAL PASS TRANSISTOR The external P-channel MOSFET is determined by the gate to source threshold voltage, input voltage, output voltage, and peak fast charge current. The selected Pchannel MOSFET must satisfy the thermal and electrical design requirements. Thermal Considerations The worst case power dissipation in the external pass transistor occurs when the input voltage is at the maximum and the output is shorted. In this case, the power dissipation is: COMPONENT SELECTION Selection of the external components in Figure 6-1 is crucial to the integrity and reliability of the charging system. The following discussion is intended as a guide for the component selection process. 6.1.1.1 6.1.1.2 PowerDissipation = V INMAX I OUT K Where: VINMAX is the maximum input voltage SENSE RESISTOR IOUT is the maximum peak fast charge current The preferred fast charge current for Lithium-Ion cells is at the 1C rate with an absolute maximum current at the 2C rate. For example, a 500 mAH battery pack has a preferred fast charge current of 500 mA. Charging at this rate provides the shortest charge cycle times without degradation to the battery pack performance or life. The current sense resistor, RSENSE, is calculated by: V CS RSENSE = ----------I OUT Where: VCS is the current limit threshold voltage IOUT is the desired peak fast charge current For the 500 mAH battery pack example, a standard value 100 m, 1% resistor provides a typical peak fast charge current of 530 mA and a maximum peak fast charge current of 758 mA. Worst case power dissipation in the sense resistor is: 2 PowerDissipation = 100m 758mA = 57.5mW A Panasonic ERJ-L1WKF100U 100 m, 1%, 1 W resistor is more than sufficient for this application. A larger value sense resistor will decrease the peak fast charge current and power dissipation in both the sense resistor and external pass transistor, but will increase charge cycle times. Design trade-offs must be considered to minimize space while maintaining the desired performance. K is the foldback current scale factor Power dissipation with a 5V, +/-10% input voltage source, 100 m, 1% sense resistor, and a scale factor of 0.43 is: PowerDissipation = 5.5V 758mA 0.43 = 1.8W Utilizing a Fairchild NDS8434 or an International Rectifier IRF7404 mounted on a 1in2 pad of 2 oz. copper, the junction temperature rise is 90°C, approximately. This would allow for a maximum operating ambient temperature of 60°C. By increasing the size of the copper pad, a higher ambient temperature can be realized or a lower value sense resistor could be utilized. Alternatively, different package options can be utilized for more or less power dissipation. Again, design tradeoffs should be considered to minimize size while maintaining the desired performance. Electrical Considerations The gate to source threshold voltage and RDSON of the external P-channel MOSFET must be considered in the design phase. The worst case, VGS provided by the controller occurs when the input voltage is at the minimum and the charge current is at the maximum. The worst case, VGS is: VGS = V DRVMAX – V INMIN – IOUT R SENSE Where: VDRVMAX is the maximum sink voltage at the VDRV output DS21705B-page 12 2002-2013 Microchip Technology Inc. MCP73826 VINMIN is the minimum input voltage source IOUT is the maximum peak fast charge current RSENSE is the sense resistor Worst case, VGS with a 5V, +/-10% input voltage source, 100 m, 1% sense resistor, and a maximum sink voltage of 1.6V is: V GS = 1.6V – 4.5V – 758mA 99m = – 2.8 V At this worst case, VGS, the RDSON of the MOSFET must be low enough as to not impede the performance of the charging system. The maximum allowable RDSON at the worst case VGS is: V INMIN – I OUT RSENSE – V BATMAX RDSON = -----------------------------------------------------------------------------------------I OUT If a reverse protection diode is incorporated in the design, it should be chosen to handle the peak fast charge current continuously at the maximum ambient temperature. In addition, the reverse leakage current of the diode should be kept as small as possible. 6.1.1.5 In the stand-alone configuration, the shutdown pin is generally tied to the input voltage. The MCP73826 will automatically enter a low power mode when the input voltage is less than the output voltage reducing the battery drain current to 8 µA, typically. By connecting the shutdown pin as depicted in Figure 6-1, the battery drain current may be further reduced. In this application, the battery drain current becomes a function of the reverse leakage current of the reverse protection diode. 6.2 R DSON 4.5V – 758mA 99m – 4.242V = -------------------------------------------------------------------------------- = 242m 758mA The Fairchild NDS8434 and International Rectifier IRF7404 both satisfy these requirements. 6.1.1.3 EXTERNAL CAPACITORS The MCP73826 is stable with or without a battery load. In order to maintain good AC stability in the constant voltage mode, a minimum capacitance of 10 µF is recommended to bypass the VBAT pin to GND. This capacitance provides compensation when there is no battery load. In addition, the battery and interconnections appear inductive at high frequencies. These elements are in the control feedback loop during constant voltage mode. Therefore, the bypass capacitance may be necessary to compensate for the inductive nature of the battery pack. SHUTDOWN INTERFACE PCB Layout Issues For optimum voltage regulation, place the battery pack as close as possible to the device’s VBAT and GND pins. It is recommended to minimize voltage drops along the high current carrying PCB traces. If the PCB layout is used as a heatsink, adding many vias around the external pass transistor can help conduct more heat to the back-plane of the PCB, thus reducing the maximum junction temperature. Virtually any good quality output filter capacitor can be used, independent of the capacitor’s minimum ESR (Effective Series Resistance) value. The actual value of the capacitor and its associated ESR depends on the forward trans conductance, gm, and capacitance of the external pass transistor. A 10 µF tantalum or aluminum electrolytic capacitor at the output is usually sufficient to ensure stability for up to a 1 A output current. 6.1.1.4 REVERSE BLOCKING PROTECTION The optional reverse blocking protection diode depicted in Figure 6-1 provides protection from a faulted or shorted input or from a reversed polarity input source. Without the protection diode, a faulted or shorted input would discharge the battery pack through the body diode of the external pass transistor. 2002-2013 Microchip Technology Inc. DS21705B-page 13 MCP73826 7.0 PACKAGING INFORMATION 7.1 Package Marking Information 6-Pin SOT-23A (EIAJ SC-74) Device 3 2 1 4 Legend: 1 2 3 4 Note: DS21705B-page 14 5 6 Part Number Code MCP73826-4.1VCH CN MCP73826-4.2VCH CP Part Number code + temperature range and voltage (two letter code) Part Number code + temperature range and voltage (two letter code) Year and 2-month period code Lot ID number In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line thus limiting the number of available characters for customer specific information. 2002-2013 Microchip Technology Inc. MCP73826 7.2 Package Dimensions Component Taping Orientation for 6-Pin SOT-23A (EIAJ SC-74) Devices User Direction of Feed Device Marking W PIN 1 P Standard Reel Component Orientation for TR Suffix Device (Mark Right Side Up) Carrier Tape, Number of Components Per Reel and Reel Size: Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size 8 mm 4 mm 3000 7 in. 6-Pin SOT-23A Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging .075 (1.90) REF. .122 (3.10) .098 (2.50) .069 (1.75) .059 (1.50) .020 (0.50) .014 (0.35) .037 (0.95) REF. .118 (3.00) .010 (2.80) .057 (1.45) .035 (0.90) .006 (0.15) .000 (0.00) 2002-2013 Microchip Technology Inc. .008 (0.20) .004 (0.09) 10° MAX. .024 (0.60) .004 (0.10) DS21705B-page 15 MCP73826 NOTES: DS21705B-page 16 2002-2013 Microchip Technology Inc. THE MICROCHIP WEB SITE CUSTOMER SUPPORT Microchip provides online support via our WWW site at www.microchip.com. This web site is used as a means to make files and information easily available to customers. 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If you wish to provide your comments on organization, clarity, subject matter, and ways in which our documentation can better serve you, please FAX your comments to the Technical Publications Manager at (480) 792-4150. Please list the following information, and use this outline to provide us with your comments about this document. TO: Technical Publications Manager RE: Reader Response Total Pages Sent ________ From: Name Company Address City / State / ZIP / Country Telephone: (_______) _________ - _________ FAX: (______) _________ - _________ Application (optional): Would you like a reply? Y N Device: Literature Number: DS21705B Questions: 1. What are the best features of this document? 2. How does this document meet your hardware and software development needs? 3. Do you find the organization of this document easy to follow? If not, why? 4. What additions to the document do you think would enhance the structure and subject? 5. What deletions from the document could be made without affecting the overall usefulness? 6. Is there any incorrect or misleading information (what and where)? 7. How would you improve this document? DS21705B-page 18 2002-2013 Microchip Technology Inc. MCP73826 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. -X.X X XXXX Device Output Voltage Temperature Range Package Examples: a) MCP73826-4.1VCHTR: Linear Charge Man- b) MCP73826-4.2VCHTR: Linear Charge Man- agement Controller, 4.1V, Tape and Reel. agement Controller, 4.2V, Tape and Reel. Device: MCP73826: Linear Charge Management Controller Output Voltage: = 4.1V = 4.2V Temperature Range: V = -20°C to +85°C Package: CHTR = SOT-23, 6-lead (Tape and Reel) Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. Your local Microchip sales office The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. New Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products. 2002-2013 Microchip Technology Inc. DS21705B-page19 MCP73826 NOTES: DS21705B-page 20 2002-2013 Microchip Technology Inc. MCP73826 NOTES: 2002-2013 Microchip Technology Inc. DS21705B-page21 MCP73826 NOTES: DS21705B-page 22 2002-2013 Microchip Technology Inc. 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Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. Analog-for-the-Digital Age, Application Maestro, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O, Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA and Z-Scale are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. GestIC and ULPP are registered trademarks of Microchip Technology Germany II GmbH & Co. & KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2002-2013, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 9781620768921 QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 == 2002-2013 Microchip Technology Inc. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. 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