BB ISO808P

ISO808
®
ISO8
08
Isolated 12-Bit Sampling
ANALOG-TO-DIGITAL CONVERTER
FEATURES
DESCRIPTION
● 100kHz SAMPLING RATE
● 1500Vrms ISOLATION CONTINUOUS
● 10µS CONVERSION TIME
The ISO808 is a low-power isolated sampling ADC
using state-of-the-art CMOS structures and high voltage capacitors. The ISO808 contains a complete 12-bit
capacitor based SAR, ADC with S/H, clock, reference, µP interface, serial out and galvanic isolation.
Laser-trimmed scaling resistors provide standard
industrial input ranges including ±10V, ±5V, 0-5V,
0-4V. They are available in 28-pin 0.6" wide plastic
DIP and are specified over the industrial temperature
range of –40°C to +85°C.
● 12-BIT SERIAL OUTPUT
● SINGLE +5V SUPPLY
● 28-PIN 0.6" PLASTIC DIP
APPLICATIONS
● INDUSTRIAL PROCESS CONTROL
● PC-BASED DATA ACQUISITION TEST
EQUIPMENT
Isolation
Barrier
Successive Approximation Register and Control Logic
20kΩ
R/C
Clock
R1IN
10kΩ
R2IN
BUSY
5kΩ
R3IN
20kΩ
Serial
CAP
Data
Data Clock
Out
Internal
+2.5V Ref
4kΩ
Serial Data
REF
SB/BTC
International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111
Internet: http://www.burr-brown.com/ • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132
©
1996 Burr-Brown Corporation
PDS-1317B
Printed in U.S.A. October, 1996
SPECIFICATIONS
ELECTRICAL
At TA = –40°C to +85°C, fS = 100kHz, VDIG = VANA = +5V, using internal reference and fixed resistors shown in Figure 3, unless otherwise specified.
ISO808P
PARAMETER
ISOLATION PARAMETERS
Rated Voltage, Continuous
Partial Discharge, 100% Test(8)
Creepage Distance (External) DIP = “P” Package
Internal Isolation Distance
Barrier Impedance
Leakage Current(9)
CONDITIONS
MIN
50Hz
1s, 5pC
1500
2500
TYP
MAX
UNITS
1.7
1.4
Vrms
Vrms
mm
mm
Ω II pF
µArms
µArms
12
Bits
16
0.10
>1013 II 15
240Vrms, 60Hz
240Vrms, 50Hz
RESOLUTION
ANALOG INPUT
Voltage Ranges
Impedance
Capacitance
±10V, 0V to 5V, etc. (See Table I)
See Table I
35
THROUGHPUT SPEED
Conversion Time
Complete Cycle
Throughput Rate
DC ACCURACY
Integral Linearity Error
Differential Linearity Error
No Missing Codes
Transition Noise(2)
Full Scale Error(3,4)
Full Scale Error Drift
Full Scale Error Drift
Bipolar Zero Error(3)
Bipolar Zero Error Drift
Unipolar Zero Error(3)
Unipolar Zero Error Drift
Power Supply Sensitivity (VDIG = VANA = VD)
AC ACCURACY
Spurious-Free Dynamic Range
Total Harmonic Distortion
Signal-to-(Noise+Distortion)
Signal-to-Noise
Full-Power Bandwidth(6)
5.7
Acquire and Convert
DIGITAL INPUTS
Logic Levels
VIL
VIH
IIL
IIH
µs
µs
kHz
±0.9
±0.9
LSB(1)
LSB
Guaranteed
0.1
±7
±2
Ext. 2.5000V Ref
Bipolar Ranges
Bipolar Ranges
Unipolar Ranges
Unipolar Ranges
+4.75V < VD < +5.25V
fIN
fIN
fIN
fIN
=
=
=
=
45kHz
45kHz
45kHz
45kHz
±2
±2
±10V
±10V
±10V
±10V
No Load
±10
±5
±0.5
90
–90
73
73
250
dB(5)
dB
dB
dB
kHz
40
Sufficient to meet AC specs
150
ns
ns
ns
2.52
V
µA
2.3
2.5
2.7
V
100
µA
1.0
VD +0.3V
±10
±10
V
V
µA
µA
Binary Two’s Complement or Straight Binary
±0.4
+4
ISINK = 1.6mA
ISOURCE = 500µA
LSB
%
ppm/°C
ppm/°C
mV
ppm/°C
mV
ppm/°C
LSB
2.5
1
Ext. 2.5000V Ref
VIL = 0V
VIH = 5V
±0.5
2.48
–0.3
VD –1.0
DIGITAL OUTPUTS
Data Coding
VOL
VOH
8
10
100
SAMPLING DYNAMICS
Aperture Delay
Aperture Jitter
Overvoltage Recovery(7)
REFERENCE
Internal Reference Voltage
Internal Reference Source Current
(Must use external buffer)
External Reference Voltage Range
for Specified Linearity
External Reference Current Drain
pF
V
V
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN
assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject
to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not
authorize or warrant any BURR-BROWN product for use in life support devices and/or systems.
®
ISO808
2
SPECIFICATIONS (CONT)
ELECTRICAL
At TA = –40°C to +85°C, fS = 100kHz, VDIG = VANA = +5V, using internal reference and fixed resistors shown in Figure 3, unless otherwise specified.
ISO808P
PARAMETER
POWER SUPPLIES
Specified Performance
VDIG1
VANA
VDIG2
IDIG1
IANA
IDIG2
Power Dissipation
CONDITIONS
MIN
TYP
MAX
UNITS
Must be ≤ VANA
+4.75
+4.75
+4.75
+5
+5
+5.25
+5.25
+5.25
V
V
V
mA
mA
mA
mW
+85
+150
°C
°C
4.2
16
10.8
175
VANA = VDIG = 5V, fS = 100kHz
TEMPERATURE RANGE
Specified Performance
Storage
Thermal Resistance, φJA
Plastic DIP
–40
–65
°C/W
75
NOTES: (1) LSB means Least Significant Bit. One LSB for the ±10V input range is 4.88mV. (2) Typical rms noise at worst case transition. (3) As measured with
fixed resistors shown in Figure 7b. Adjustable to zero with external potentiometer. (4) Full scale error is the worst case of –Full Scale or +Full Scale untrimmed
deviation from ideal first and last code transitions, divided by the transition voltage (not divided by the full-scale range) and includes the effect of offset error. (5)
All specifications in dB are referred to a full-scale input. (6) Usable Bandwidth defined as Full-Scale input frequency at which Signal-to-(Noise + Distortion) degrades
to 60dB. (7) Recovers to specified performance after 2 x FS input overvoltage. (8) All devices receive a 1s test. Failure criterion is ≥ 5 pulses of ≥ 5pC. (9) Tested
at 2500Vrms, 50Hz limit 10µA.
ABSOLUTE MAXIMUM RATINGS
ELECTROSTATIC
DISCHARGE SENSITIVITY
........................................................................... ±25V
........................................................................... ±25V
........................................................................... ±25V
.................................... VANA +0.3V to AGND2 –0.3V
........................................... Indefinite Short to AGND,
Momentary Short to VANA
Ground Voltage Differences: DGND and AGND ............................... ±0.3V
DGND, AGND, and GNDISO ........... 1563Vrms
VANA ....................................................................................................... 7V
VDIG to VANA ...................................................................................... +0.3V
VDIG ........................................................................................................ 7V
Digital Inputs .............................................................. –0.3V to VDIG +0.3V
Maximum Junction Temperature ................................................... +165°C
Internal Power Dissipation ............................................................. 700mW
Lead Temperature (soldering, 10s) ................................................ +300°C
Analog Inputs: R1IN
R2IN
R3IN
CAP
REF
Electrostatic discharge can cause damage ranging from performance degradation to complete device failure. BurrBrown Corporation recommends that all integrated circuits
be handled and stored using appropriate ESD protection
methods.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits
may be more susceptible to damage because very small
parametric changes could cause the device not to meet
published specifications.
PACKAGE INFORMATION
PRODUCT
ISO808P
PACKAGE
PACKAGE DRAWING
NUMBER(1)
28-Pin Plastic DIP
215-1
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
ORDERING INFORMATION
PRODUCT
ISO808P
MAXIMUM INTEGRAL
LINEARITY ERROR (LSB)
TYPICAL SIGNAL-TO(NOISE + DISTORTION) RATIO (dB)
SPECIFICATION
TEMPERATURE RANGE (°C)
PACKAGE
±0.9
70
–40°C to +85°C
28-Pin Plastic DIP
®
3
ISO808
PIN #
DIGITAL
I/O
NAME
DESCRIPTION
1
RC
I
2
BUSY
O
Read/Convert. With BUSY high, a falling edge on R/C initiates a new conversion.
3
+5VDIG2
Isolated Digital Supply Volts.
10
+5VDIG1
Digital Supply Volts.
11
+5VANA
Analog Supply Volts.
12
R1IN
Analog Input.
13
R2N
Analog Input.
14
R3N
Analog Input.
15
CAP
Reference Buffer Output. 2.2µF tantalum capacitor to ground.
Reference Input/Output. 2.2µF tantalum capacitor to ground.
At the start of conversion BUSY goes LOW and stays LOW until conversion is complete.
16
REF
17
AGND
18
SB/BTC
19
DGND1
26
DGND2
27
DATACLK
O
Data Clock Output.
28
SDATA
O
Serial Output Synchronized to DATACLK.
Analog Ground.
I
Selects Straight Binary or Binary Two’s Complement for output data format.
Digital Ground.
Isolated Ground.
TABLE I. Pin Assignments.
PIN CONFIGURATION
R/C
1
28 SDATA
BUSY
2
27 DATACLK
+5VDIG2
3
26 DGND2
ANALOG
INPUT
RANGE
CONNECT R1IN
VIA 200Ω
TO
±10V
±5V
±3.33
0V to 10V
0V to 5V
0V to 4V
VIN
AGND
VIN
AGND
AGND
VIN
CONNECT R2IN
VIA 100Ω
CONNECT R3IN
TO
TO
AGND
VIN
VIN
VIN
AGND
AGND
IMPEDANCE
CAP
CAP
CAP
AGND
VIN
VIN
22.9kΩ
13.3kΩ
10.7kΩ
13.3kΩ
10.0kΩ
10.7kΩ
TABLE I. Input Range Connections. See Figure 3 for
complete information.
ISO808
+5VDIG1 10
19 DGND1
+5VANA 11
18 SB/BTC
R1IN 12
17 AGND
R2IN 13
16 REF
R3IN 14
15 CAP
SYMBOL
DESCRIPTION
t1
Convert Pulse Width
t2
BUSY Delay
t3
BUSY LOW
t4
BUSY Delay after
End of Conversion
MIN TYP MAX UNITS
40
4500
ns
8
µs
120
ns
220
t5
Aperture Delay
40
t6
Conversion Time
5.7
t7
Acquisition Time
ns
ns
8
µs
2
µs
10
µs
t6 + t7
Throughput Time
9
t8
R/C LOW to DATACLK Delay
450
ns
t9
DATACLK Period
440
ns
t10
Data Valid to DATACLK
HIGH Delay
20
75
ns
t11
Data Valid after
DATACLK LOW Delay
100
125
ns
TABLE II. Conversion and Data Timing. TA = –40°C to +85°C.
®
ISO808
4
t1
R/C
t3
BUSY
t2
t4
t5
MODE Acquire
Convert
Acquire
t6
t7
FIGURE 1. Basic Conversion Timing.
t8
R/C
t9
1
DATACLK
2
3
11
12
Bit 9 Valid
Bit 1 Valid
LSB Valid
t11
t10
SDATA
MSB Valid
Bit 10 Valid
t2
t3
BUSY
FIGURE 2. Serial Data Timing.
SPECIFIC FUNCTION
R/C
BUSY
DATACLK
SB/BTC
0
1
Output
X
Initiates Conversion “n”. Data from conversion “n–1” clocked out
on DATA synchronized to 12 clock pulses output on DATACLK.
1>0
1
Output
X
Initiates Conversion “n”. Data from conversion “n–1” clocked out
on DATA synchronized to 12 clock pulses output on DATACLK.
Incorrect Conversions
0
0>1
X
X
R/C must be HIGH or a new conversion will be initiated without
time for acquisition.
Selecting Output Format
X
X
X
0
Serial Data is output in Binary Two’s Complement format.
X
X
X
1
Serial Data is output in Straight Binary format.
Initiate Conversion and Output Data
OPERATION
TABLE III. Control Truth Table.
DIGITAL OUTPUT
BINARY TWO’S
COMPLEMENT
(SB/BTC LOW)
DESCRIPTION
Full-Scale Range
Least Significant Bit (LSB)
+Full Scale (FS – 1LSB)
Midscale
One LSB Below Midscale
–Full Scale
HEX
BINARY CODE
CODE
3.99902V
0111 1111 1111
7FF
1111 1111 1111
FFF
2V
0000 0000 0000
000
1000 0000 0000
800
1.99902V
1111 1111 1111
FFF
0111 1111 1111
7FF
0V
1000 0000 0000
800
0000 0000 0000
000
ANALOG INPUT
±10
±5
±3.33V
4.88mV
2.44mV
1.63mV
9.99512V 4.99756V 3.33171V
0V
0V
–4.88mV
–2.44mV
–1.63mV
–10V
–5V
–3.333333V
0V to 5V 0V to 10V
1.22mV
2.44mV
4.99878V 9.99756V
0V
2.5V
5V
2.49878V 4.99756V
0V
0V
STRAIGHT BINARY
(SB/BTC HIGH)
HEX
BINARY CODE
CODE
0V to 4V
0.98mV
TABLE IV. Output Codes and Ideal Input Voltages.
®
5
ISO808
Input Range
With Trim
(Adjust offset first at 0V, then adjust gain)
Without Trim
200Ω
200Ω
R1IN
R1IN
100Ω
100Ω
R2IN
VIN
R2IN
VIN
33.2kΩ
33.2kΩ
R3IN
0V – 10V
R3IN
2.2µF
CAP
+5V
+
CAP
+5V
576kΩ
+
2.2µF
50kΩ
REF
2.2µF
50kΩ
REF
+
+
2.2µF
AGND
AGND
200Ω
200Ω
R1IN
R1IN
AGND
AGND
100Ω
100Ω
R2IN
33.2kΩ
0V – 5V
R3IN
VIN
R2IN
33.2kΩ
R3IN
VIN
+5V
CAP
CAP
+
+5V
2.2µF
2.2µF
+
50kΩ
REF
2.2µF
576kΩ
REF
50kΩ
+
2.2µF
AGND
AGND
200Ω
200Ω
VIN
VIN
R1IN
R1IN
AGND
AGND
100Ω
100Ω
R2IN
R2IN
0V – 4V
R3IN
R3IN
33.2kΩ
2.2µF
+5V
33.2kΩ
+5V
CAP
+
2.2µF
+
576kΩ
50kΩ
REF
+
CAP
REF
50kΩ
2.2µF
2.2µF
+
AGND
AGND
FIGURE 3a. Offset/Gain Circuits for Unipolar Input Ranges.
®
ISO808
+
6
Input Range
With Trim
(Adjust offset first at 0V, then adjust gain)
Without Trim
200Ω
200Ω
VIN
VIN
R1IN
R1IN
100Ω
100Ω
R2IN
R2IN
+5V
33.2kΩ
±10V
33.2kΩ
R3IN
R3IN
50kΩ
+5V
CAP
+
2.2µF
2.2µF
CAP
+
576kΩ
REF
2.2µF
REF
50kΩ
+
2.2µF
+
AGND
AGND
200Ω
200Ω
R1IN
R1IN
100Ω
100Ω
R2IN
VIN
33.2kΩ
R2IN
VIN
33.2kΩ
R3IN
2.2µF
±5V
CAP
+
+5V
R3IN
+
CAP
+5V
576kΩ
2.2µF
50kΩ
REF
50kΩ
+
2.2µF
REF
+
2.2µF
AGND
AGND
200Ω
200Ω
VIN
VIN
R1IN
R1IN
100Ω
100Ω
R2IN
R2IN
R3IN
R3IN
33.2kΩ
±3.33V
33.2kΩ
CAP
2.2µF
+
CAP
+5V
+5V
576kΩ
+
REF
2.2µF
+
50kΩ
50kΩ
REF
+
2.2µF
2.2µF
AGND
AGND
FIGURE 3b. Offset/Gain Circuits for Bipolar Input Ranges.
®
7
ISO808