BSI Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616UV2021 DESCRIPTION FEATURES The BS616UV2021 is a high performance, Ultra low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide range of 1.8V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.08uA and maximum access time of 70/100ns in 2.0V operation. Easy memory expansion is provided by active HIGH chip enable2(CE2), active LOW chip enable1(CE1), active LOW output enable(OE) and three-state output drivers. The BS616UV2021 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616UV2021 is available in DICE form and 48-pin BGA type. • Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA (Max.) operating current I-grade: 20mA (Max.) operating current 0.08uA (Typ.) CMOS standby current Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade: 25mA (Max.) operating current 0.1uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc = 2.0V -10 100ns (Max.) at Vcc = 2.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE1, CE2 and OE options • I/O Configuration x8/x16 selectable by CIO, LB and UB pin PRODUCT FAMILY PRODUCT FAMILY BS616UV2021DC BS616UV2021AC BS616UV2021DI BS616UV2021AI OPERATING TEMPERATURE Vcc RANGE +0 O C to +70 O C 1.8V ~ 3.6V -40 O C to +85 O C 1.8V ~ 3.6V PIN CONFIGURATION POWER DISSIPATION STANDBY Operating SPEED ( ns ) (ICCSB1, Max ) Vcc= 2.0V PKG TYPE (ICC, Max ) Vcc= 2.0V Vcc= 3.0V Vcc= 2.0V Vcc= 3.0V 70 / 100 0.5uA 0.7uA 15mA 20mA 70 / 100 1uA 1.5uA 20mA 25mA DICE BGA-48-0608 DICE BGA-48-0608 BLOCK DIAGRAM A15 A14 A13 A12 Address A11 A10 Input A9 A8 Buffer 20 1024 Row Memory Array Decoder 1024 x 2048 A7 A6 2048 16(8) D0 . . . . . . . . Data Input Buffer 16(8) Column I/O Write Driver Sense Amp 16(8) 16(8) 128(256) Data Output Buffer D15 Column Decoder CE1 CE2 WE OE UB LB CIO 14(16) Control Address Input Buffer A16 A0 A1 A2 A3 A4 A5 (SAE) Vdd Vss Brilliance Semiconductor Inc. reserves the right to modify document contents without notice. R0201-BS616UV2021 1 Revision 2.4 April 2002 BSI BS616UV2021 PIN DESCRIPTIONS Name Function A0-A16 Address Input These 17 address inputs select one of the 131,072 x 16-bit words in the RAM. SAE Address Input This address input incorporates with the above 17 address input select one of the 262,144 x 8-bit bytes in the RAM if the CIO is LOW. Don't use when CIO is HIGH. CIO x8/x16 select input This input selects the organization of the SRAM. 131,072 x 16-bit words configuration is selected if CIO is HIGH. 262,144 x 8-bit bytes configuration is selected if CIO is LOW. CE1 Chip Enable 1 Input CE2 Chip Enable 2 Input CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active to read from or write to the device. If either chip enable is not active, the device is deselected and is in a standby power mode. The DQ pins will be in the high impedance state when the device is deselected. WE Write Enable Input The write enable input is active LOW and controls read and write operations. With the chip selected, when WE is HIGH and OE is LOW, output data will be present on the DQ pins; when WE is LOW, the data present on the DQ pins will be written into the selected memory location. OE Output Enable Input The output enable input is active LOW. If the output enable is active while the chip is selected and the write enable is inactive, data will be present on the DQ pins and they will be enabled. The DQ pins will be in the high impedance state when OE is inactive. LB and UB Data Byte Control Input Lower byte and upper byte data input/output control pins. The chip is deselected when both LB and UB pins are HIGH. D0 - D15 Data Input/Output Ports These 16 bi-directional ports are used to read data from or write data into the RAM. Vcc Power Supply Gnd Ground R0201-BS616UV2021 2 Revision 2.4 April 2002 BSI BS616UV2021 TRUTH TABLE MODE CE1 CE2 H X Fully Standby Output Disable Read from SRAM ( WORD mode ) Write to SRAM ( WORD mode ) X L L H L H L H OE WE CIO X X X H L X H X H H L H LB UB SAE D0~7 D8~15 VCC Current X X X X X High-Z High-Z ICCSB, ICCSB1 X X X High-Z High-Z ICC L H Dout High-Z H L High-Z Dout L L Dout Dout L H Din X H L X Din L L Din Din X X ICC ICC Read from SRAM ( BYTE Mode ) L H L H L X X A-1 Dout High-Z ICC Write to SRAM ( BYTE Mode ) L H X L L X X A-1 Din X ICC ABSOLUTE MAXIMUM RATINGS(1) SYMBOL PARAMETER with OPERATING RANGE RATING UNITS -0.5 to Vcc+0.5 V VTERM Terminal Voltage Respect to GND TBIAS Temperature Under Bias -40 to +125 O C TSTG Storage Temperature -60 to +150 O C PT Power Dissipation 1.0 W IOUT DC Output Current 20 mA RANGE AMBIENT TEMPERATURE Commercial 0 O C to +70 O C 1.8V Industrial -40 O C to +85 O C 1.8V ~ ~ CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz) SYMBOL 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. R0201-BS616UV2021 Vcc 3 CIN CDQ PARAMETER Input Capacitance Input/Output Capacitance CONDITIONS MAX. UNIT VIN=0V 6 pF VI/O=0V 8 pF 1. This parameter is guaranteed and not tested. Revision 2.4 April 2002 3.6V 3.6V BSI BS616UV2021 DC ELECTRICAL CHARACTERISTICS (TA = 0oC to +70oC) PARAMETER NAME PARAMETER TEST CONDITIONS MIN. TYP.(1) MAX. V IL Guaranteed Input Low Voltage(2) Vcc=2V V IH Guaranteed Input High Voltage(2) Vcc=2V 1.4 Vcc=3V 2.0 I IL Input Leakage Current I OL Output Leakage Current V OL Output Low Voltage Vcc = Max, I OL = 2mA V OH Output High Voltage Vcc = Min, IOH = -1mA I CC Operating Power Supply Current I CCSB I CCSB1 Vcc=3V -0.5 -- UNITS 0.6 V 0.8 -- Vcc+0.2 V -- -- 1 uA -- -- 1 uA -- -- 0.4 V Vcc=3V 1.6 2.4 -- -- V Vcc = Max, CE1= V IL, CE2=V IH I DQ = 0mA, F = Fmax(3) Vcc=2V -- -- 15 Vcc=3V -- -- 20 Standby Current-TTL Vcc = Max, CE1 = VIH or CE2=VIL IDQ = 0mA Vcc=2V -- -- 0.5 Vcc=3V -- -- 1 Vcc=2V -- Standby Current-CMOS Vcc = Max, CE1 ЊVcc-0.2V or CE2Љ 0.2V, Other inputs Њ Vcc - 0.2V or VINЉ 0.2V Vcc = Max, VIN = 0V to Vcc Vcc = Max, CE1 = V IH or CE2=VIL or OE = VIH, V I/O= 0V to Vcc Vcc=2V Vcc=3V Vcc=2V 0.08 mA mA 0.5 uA Vcc=3V -- 0.1 0.7 1. Typical characteristics are at TA = 25oC. 2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included. 3. Fmax = 1/tRC . R0201-BS616UV2021 4 Revision 2.4 April 2002 BSI BS616UV2021 DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70oC ) SYMBOL PARAMETER TEST CONDITIONS VDR Vcc for Data Retention CE1 Њ Vcc - 0.2V or CE2 Љ 0.2V or VIN Њ Vcc - 0.2V or VIN Љ 0.2V ICCDR Data Retention Current CE1 Њ Vcc - 0.2V or CE2 Љ 0.2V VIN Њ Vcc - 0.2V or VIN Љ 0.2V tCDR Chip Deselect to Data Retention Time MIN. TYP. (1) MAX. UNITS 1.5 -- -- V -- 0.05 0.5 uA 0 -- -- ns TRC (2) -- -- ns See Retention Waveform tR Operation Recovery Time 1. Vcc = 1.5V, TA = + 25OC 2. tRC = Read Cycle Time LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled ) Data Retention Mode Vcc VDR Њ 1.5V Vcc CE1 Vcc tR t CDR CE1 Њ Vcc - 0.2V VIH VIH LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled ) Data Retention Mode Vcc VDR Њ 1.5V Vcc CE2 R0201-BS616UV2021 VIL Vcc tR t CDR CE2 Љ 0.2V 5 VIL Revision 2.4 April 2002 BSI BS616UV2021 AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level KEY TO SWITCHING WAVEFORMS Vcc/0V 5ns WAVEFORM 0.5Vcc AC TEST LOADS AND WAVEFORMS 1333 Ω 2V 1333 Ω 2V OUTPUT INPUTS OUTPUTS MUST BE STEADY MUST BE STEADY MAY CHANGE FROM H TO L WILL BE CHANGE FROM H TO L MAY CHANGE FROM L TO H WILL BE CHANGE FROM L TO H OUTPUT , 100PF INCLUDING JIG AND SCOPE 5PF INCLUDING JIG AND SCOPE 2000 Ω 2000 Ω FIGURE 1A FIGURE 1B THEVENIN EQUIVALENT 800 Ω OUTPUT DON T CARE: ANY CHANGE PERMITTED CHANGE : STATE UNKNOWN DOES NOT APPLY CENTER LINE IS HIGH IMPEDANCE ”OFF ”STATE 1.2V ALL INPUT PULSES Vcc GND → 10% 90% 90% 10% ← → ← 5ns FIGURE 2 AC ELECTRICAL CHARACTERISTICS (TA = 0oC to +70oC, Vcc =2.0V ) READ CYCLE JEDEC PARAMETER NAME PARAMETER NAME BS616UV2021-70 MIN. TYP. MAX. DESCRIPTION BS616UV2021-10 MIN. TYP. MAX. UNIT tAVAX tRC Read Cycle Time 70 -- -- 100 -- -- ns tAVQV tAA Address Access Time -- -- 70 -- -- 100 ns t E1LQV t ACS1 Chip Select Access Time (CE1) -- -- 70 -- -- 100 ns t E2LQV t ACS2 Chip Select Access Time (CE2) -- -- 70 -- -- 100 ns tBA tBA(1) Data Byte Control Access Time (LB,UB) -- -- 35 -- -- 50 ns tGLQV tOE Output Enable to Output Valid -- -- 35 -- -- 50 ns tELQX tCLZ Chip Select to Output Low Z (CE1,CE2) 10 -- -- 15 -- -- ns tBE tBE Data Byte Control to Output Low Z (LB,UB) 10 -- -- 15 -- -- ns tGLQX tOLZ Output Enable to Output in Low Z 10 -- -- 15 -- -- ns tEHQZ tCHZ Chip Deselect to Output in High Z (CE1,CE2) 0 -- 35 0 -- 40 ns tBDO tBDO Data Byte Control to Output High Z (LB, UB) 0 -- 35 0 -- 40 ns tGHQZ tOHZ Output Disable to Output in High Z 0 -- 30 0 -- 35 ns tAXOX tOH Output Disable to Address Change 10 -- -- 15 -- -- ns NOTE : 1. tBA is 35ns/50ns (@speed=70ns/100ns) with address toggle . tBA is 70ns/100ns (@speed=70ns/100ns) without address toggle . R0201-BS616UV2021 6 Revision 2.4 April 2002 BSI BS616UV2021 SWITCHING WAVEFORMS (READ CYCLE) READ CYCLE1 (1,2,4) t RC ADDRESS t t t OH AA OH D OUT READ CYCLE2 (1,3,4) CE2 t ACS2 t ACS1 CE1 t (5) t (5) CLZ CHZ D OUT READ CYCLE3 (1,4) t RC ADDRESS t AA OE t CE2 t t CE1 t t t OE OH ACS2 OLZ t ACS1 (5) CLZ OHZ (5) (1,5) t CHZ t BDO LB,UB t BE t BA D OUT NOTES: 1. WE is high in read Cycle. 2. Device is continuously selected when CE1 = VIL and CE2 = VIH. 3. Address valid prior to or coincident with CE1 transition low and CE2 transition high. 4. OE = VIL . 5. Transition is measured ± 500mV from steady state with CL = 30pF as shown in Figure 1B. The parameter is guaranteed but not 100% tested. R0201-BS616UV2021 7 Revision 2.4 April 2002 BSI BS616UV2021 AC ELECTRICAL CHARACTERISTICS (TA = 0oC to +70oC, Vcc =2.0V ) WRITE CYCLE JEDEC PARAMETER NAME PARAMETER NAME tAVAX t E1LWH tAVWL tAVWH tWLWH tWHAX tBW tWLQZ tDVWH tWHDX tGHQZ tWC tCW t AS t AW tWP tWR tBW(1) tWHZ tDW tDH tOHZ tWHOX tOW BS616UV2021-70 MIN. TYP. MAX. BS616UV2021-10 MIN. TYP. MAX. Write Cycle Time 70 -- -- 100 -- -- ns Chip Select to End of Write 70 -- -- 100 -- -- ns DESCRIPTION UNIT Address Setup Time 0 -- -- 0 -- -- ns Address Valid to End of Write 70 -- -- 100 -- -- ns 35 -- -- 50 -- -- ns 0 -- -- 0 -- -- ns Write Pulse Width Write recovery Time (CE2,CE1,WE) 30 -- -- 40 -- -- ns Write to Output in High Z (LB,UB) 0 -- 30 0 -- 40 ns Data to Write Time Overlap 30 -- -- 40 -- -- ns Data Hold from Write Time 0 -- -- 0 -- -- ns Output Disable to Output in High Z 0 -- 30 0 -- 40 ns End of Write to Output Active 5 -- -- 10 -- -- ns Date Byte Control to End of Write NOTE : 1. tBW is 30ns/40ns (@speed=70ns/100ns) with address toggle. ; tBW is 70ns/100ns (@speed=70ns/100ns) without address toggle . SWITCHING WAVEFORMS (WRITE CYCLE) WRITE CYCLE1 (1) t WC ADDRESS t (3) WR OE CE2 (5) (11) t CW (5) CE1 t t WE BW (5) LB,UB (3) AW t WP t AS (2) (4,10) t OHZ D OUT t t DH DW D IN R0201-BS616UV2021 8 Revision 2.4 April 2002 BSI BS616UV2021 WRITE CYCLE2 (1,6) t WC ADDRESS CE2 (11) t (5) CE1 t BW (5) LB,UB t WE CW AW t t WP WR (3) (2) t DH t AS (4,10) t WHZ D OUT (7) (8) t DW t DH (8,9) D IN NOTES: 1. WE must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE2, CE1 and WE low. All signals must be active to initiate a write and any one signal can terminate a write by going inactive. The data input setup and hold timing should be referenced to the second transition edge of the signal that terminates the write. 3. TWR is measured from the earlier of CE2 going low, or CE1 or WE going high at the end of write cycle. 4. During this period, DQ pins are in the output state so that the input signals of opposite phase to the outputs must not be applied. 5. If the CE2 high transition or CE1 low transition or LB,UB low transition occurs simultaneously with the WE low transitions or after the WE transition, output remain in a high impedance state. 6. OE is continuously low (OE = VIL ). 7. DOUT is the same phase of write data of this write cycle. 8. DOUT is the read data of next address. 9. If CE2 is high or CE1 is low during this period, DQ pins are in the output state. Then the data input signals of opposite phase to the outputs must not be applied to them. 10. Transition is measured ± 500mV from steady state with CL = 30pF as shown in Figure 1B. The parameter is guaranteed but not 100% tested. 11. TCW is measured from the later of CE2 going high or CE1 going low to the end of write. R0201-BS616UV2021 9 Revision 2.4 April 2002 BSI BS616UV2021 ORDERING INFORMATION BS616UV2021 X X -- Y Y SPEED 70: 70ns 10: 100ns GRADE C: +0oC ~ +70oC I: -40oC ~ +85oC PACKAGE A :BGA - 48 PIN(6x8mm) D :DICE PACKAGE DIMENSIONS NOTES: 1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS. 2: PIN#1 DOT MARKING BY LASER OR PAD PRINT. 1.4 Max. 3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS. BALL PITCH e = 0.75 D E N D1 E1 8.0 6.0 48 5.25 3.75 E1 e D1 VIEW A 48 mini-BGA (6 x 8mm) R0201-BS616UV2021 10 Revision 2.4 April 2002 BSI BS616UV2021 REVISION HISTORY Revision Description Date 2.2 2001 Data Sheet release Apr. 15, 2001 2.3 Modify Standby Current (Typ. and Max.) Jun. 29, 2001 2.4 Modify some AC parameters April,15,2002 R0201-BS616UV2021 11 Note Revision 2.4 April 2002