N-Channel JFET General Purpose Amplifier/Switch CORPORATION 2N5457 – 2N5459 ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) PIN CONFIGURATION Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Continuous Forward Gate Current . . . . . . . . . . . . . . . . 10mA Storage Temperature Range . . . . . . . . . . . . . -65oC to +150oC Operating Temperature Range . . . . . . . . . . . -55oC to +135oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . 2.82mW/ oC TO-92 NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 5010 G D S ORDERING INFORMATION Part Package Temperature Range 2N5457-59 Plastic TO-92 X2N5457-59 Sorted Chips in Carriers -55oC to +135oC -55oC to +135oC ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified) SYMBOL BVGSS PARAMETER Gate-Source Breakdown Voltage MIN -25 IGSS Gate Reverse Current VGS(off) Gate-Source Cutoff Voltage VGS Gate-Source Voltage IDSS Zero-Gate-Voltage Drain Current (Note 1) | yfs | Forward Transfer Admittance | yos | Ciss Crss NF Output Admittance Input Capacitance (Note 2) Reverse Transfer Capacitance (Note 2) Noise Figure (Note 2) 2N5457 2N5458 2N5459 2N5457 2N5458 2N5459 2N5457 2N5458 2N5459 2N5457 2N5458 2N5459 NOTES: 1. Pulse test required. PW ≤630ms, duty cycle ≤10%. 2. For design reference only, not 100% tested. -0.5 -1.0 -2.0 2.5 3.5 4.5 1.0 2.0 4.0 1000 1500 2000 MAX -1.0 -200 -6.0 -7.0 -8.0 UNITS V nA V V 5.0 9.0 16 5000 5500 6000 50 7.0 3.0 3.0 TEST CONDITIONS IG = -10µA, VDS = 0 VGS = -15V, VDS = 0 VGS = -15V, VDS = 0, TA = 100 oC VDS = 15V, ID = 10nA VDS = 15V, ID = 100µA, Typical VDS = 15V, ID = 200µA, Typical VDS = 15V, ID = 400µA, Typical VDS = 15V, VGS = 0 mA VDS = 15V, VGS = 0 , f = 1kHz µS µS pF pF dB VDS = 15V, VGS = 0, f = 1kHz VDS = 15V, VGS = 0, f = 1MHz VDS = 15V, VGS = 0, f = 1MHz VDS = 15V, VGS = 0, RG = 1MHz, BW = 1Hz, f = 1kHz