CALOGIC 3N163

P-Channel Enhancement Mode
MOSFET General Purpose
Amplifier Switch
CORPORATION
3N163 / 3N164
ABSOLUTE MAXIMUM RATINGS (Note 1)
(TA = 25oC unless otherwise specified)
FEATURES
• Very High Input Impedance
• High Gate Breakdown
Switching
• Fast
• Low Capacitance
Drain-Source or Drain-Gate Voltage
3N163. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40V
3N164. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V
Static Gate-Source Voltage
3N163. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±40V
3N164. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Transient Gate-Source Voltage (Note 2) . . . . . . . . . . . . ±125V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature . . . . . . . . . . . . . . . . . . . -65oC to +200oC
Operating Temperature . . . . . . . . . . . . . . . . . -55oC to +150oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW
Derate above +25oC . . . . . . . . . . . . . . . . . . . . . . 3.0mW/ oC
PIN CONFIGURATION
TO-72
S
C
1503
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
G
D
ORDERING INFORMATION
Part
Package
Temperature Range
3N163-64
X3N163-64
Hermetic TO-72
Sorted Chips in Carriers
-55oC to +150oC
-55oC to +150oC
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
SYMBOL
PARAMETER
3N163
3N164
UNITS
TEST CONDITIONS
MIN MAX MIN MAX
IGSS
Gate-Body Leakage Current
-10
-10
-25
-25
BVDSS
Drain-Source Breakdown Voltage
-40
-30
BVSDS
Source-Drain Breakdown Voltage
-40
-30
pA
VGS = -40V, VDS = 0 (3N163)
VGS = -30V, VDS = 0 (3N164)
TA = +125oC
ID = -10µA, VGS = 0
IS = -10µA, VGD = 0, VBD = 0
V
VGS(th)
Threshold Voltage
-2.0
-5.0
-2.0
-5.0
VGS(th)
Threshold Voltage
-2.0
-5.0
-2.0
-5.0
VDS = -15V, ID = -10µA
VGS
Gate Source Voltage
-2.5
-6.5
-2.5
-6.5
VDS = -15V, ID = -0.5mA
IDSS
Zero Gate Voltage Drain Current
200
400
ISDS
Source Drain Current
400
800
rDS(on)
Drain-Source on Resistance
250
300
ID(on)
On Drain Current
-5.0 -30.0 -3.0 -30.0
pA
VDS = VGS, I D = -10µA
VDS = -15V, VGS = 0
VSD = 15V, VGS = VDB = 0
ohms
VGS = -20V, ID = -100µA
mA
VDS = +15V, VGS = -10V
3N163 / 3N164
CORPORATION
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC and VBS = 0 unless otherwise specified)
SYMBOL
3N163
PARAMETER
3N164
UNITS
MIN
MAX
MIN
MAX
2000
4000
1000
4000
gfs
Forward Transconductance
gos
Output Admittance
250
250
Ciss
Input Capacitance - Output Shorted
2.5
2.5
Crss
Reverse Transfer Capacitance
0.7
0.7
Coss
Output Capacitance - Input Shorted
3.0
3.0
TEST CONDITIONS
µS
VDS = -15V, ID = -10mA, f = 1kHz
pF
VDS = -15V, ID = -10mA, f = 1MHz
(Note 1)
NOTE 1: For design reference only, not 100% tested.
SWITCHING CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified)
SYMBOL
3N163
PARAMETER
MIN
3N164
MAX
MIN
UNITS
TEST CONDITIONS
MAX
ton
Turn-On Delay Time
12
12
tr
Rise Time
24
24
toff
Turn-Off Delay Time
50
50
ns
VDD = -15V
ID(on) = -10mA (Note 1)
RG = RL = 1.4kΩ
SWITCHING TIMES TEST CIRCUIT
VDD
10%
10%
R1
tr
VOUT
R2
t on
90%
10%
10%
t off
50Ω
0160
INPUT PULSE
SAMPLING SCOPE
RISE TIME < 2ns
PULSE WIDTH > 200ns
t r < 0.2ns
CIN < 2pF
RIN > 10MΩ
0170