CALOGIC SD403

High Speed DMOS
N-Channel Switch
CORPORATION
SD403
FEATURES
• Ultra High Speed Switching . . . . . . . . . . . . . . . . . tr < 1ns
• Very Low Capacitance. . . . . . . . . . . . . . crss 0.4pf typical
and TTL Compatible Input
• CMOS
• Low ON Resistance . . . . . . . . . . . . . . . . . 40 ohms typical
APPLICATIONS
• Switch Drivers
• Video Switches
and Hold
• Samples
• Track and Hold
• VHF/UHF Amplifiers
DESCRIPTION
The Calogic SD403 is an N-Channel Enhancement-Mode
Lateral DMOS FET. This product has very low capacitance,
(crss < 0.4pf typical) allowing for high speed switching (tr 1ns).
The SD403 is a high gain device (19mmhos) and has good
performance values for sample and hold circuits, video
switches and switch drivers where lower capacitance and high
speed switching are critical.
ORDERING INFORMATION
Part
Package
Temperature Range
-55 to +125oC
-55 to +125oC
-55 to +125oC
SD403BD Plastic TO-92
SD403CY SOT-143 Surface Mount
XSD403
Sorted Chips in Carriers
PIN CONFIGURATION
SCHEMATIC DIAGRAM
DRAIN
(2)
TO-92
GATE
(3)
SOURCE
(1)
TO-92
D
S G
CD1-1
DRAIN
(2)
GATE (3)
DRAIN (2)
BODY
(4)
GATE
(3)
BODY (4)
SOT-143
SOURCE (1)
PRODUCT MARKING
SD403CY
SD403
SOURCE
(1)
SOT-143
SD403
CORPORATION
ABSOLUTE MAXIMUM RATINGS (TA = +25oC unless otherwise noted)
Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . +15V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V
+20V
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V
+20V
Source-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . 50mA
Power Dissipation (at or below TA = +25oC) . . . . . . . . 300mW
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . 3.0mW/ oC
Operating Junction and Storage
Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC
ELECTRICAL CHARACTERISTICS (TA = +25oC unless otherwise specified)
SYMBOL
CHARACTERISTICS
MIN
TYP
15
25
MAX
UNIT
TEST CONDITIONS
STATIC
BVDSS
Drain-Source Breakdown Voltage
V
ID = 1.0µA, VGS =0
ID(OFF)
Drain-Source OFF Leakage Current
1.0
µA
VDS = 15V, VGS = 0
IGSS
Gate-Source Leakage Current
1.0
µA
VGS = 20V, VDS = 0
ID(ON)
Drain-Source ON Current
80
mA
VDS = 10V, VGS = 10 V Pulse Test
VGS(th)
Gate-Source Threshold Voltage
0.3
VDS(ON)
Drain-Source ON Voltage
rDS(ON)
Drain-Source ON Resistance
VDS(ON)
rDS(ON)
120
1.5
V
140
175
mV
140
175
ohms
Drain-Source ON Voltage
40
60
mV
Drain-Source ON Resistance
40
60
ohms
ID = 1.0µΑ, VDS = VGS
ID = 1mA, VGS = 2.4V
ID = 1mA, VGS = 4.5V
DYNAMIC
gfs
Common-Source Forward Transconductance
ciss
Common-Source Input Capacitance
4.5
6.0
coss
Common-Source Output Capacitance
2.0
3.0
crss
Common-Source Reverse Transfer Capacitance
0.4
0.6
td(on)
Turn ON Delay Time
0.8
1.2
tr
Rise Time
0.9
1.2
t(OFF)
Turn OFF Time
1.4
SWITCHING TIMES TEST CIRCUIT
VDD
15
19
mS
VDS = 10V, VGS = 0
f = 1MHz
ns
VDD = 10V, RL = 680Ω
VG(ON) = 10V, RG = 51Ω
CL = 1.5pF
TEST WAVEFORMS
90%
V in
0
VOUT
10%
t off
t d(on)
VG
510 Ω
51 Ω
OSCILLOSCOPE
RG
Pulse Test
pf
VG(on)
RL
ID = 20mA VDS = 10V,
f = 1KHz
INPUT PULSE
t r <_ 0.5 nSEC
PULSE WIDTH - 100 nSEC
SAMPLING OSCILLOSCOPE
t r < 0.36 nSEC
Rin > 1M Ω
C in < 2.0 pF
t on
tr
VDD
t fall
t d(off)
90%
90%
Vout
~
~ 0V
10%
10%
SD403
CORPORATION
TYPICAL PERFORMANCE CHARACTERISTICS (TA = +25oC unless otherwise noted)
DRAIN-SOURCE ON RESISTANCE
-VSGATE-SOURCE VOLTAGE
ON DRAIN CURRENT
-VSGATE-SOURCE VOLTAGE
175
VDS = 10V
PULSE TEST
160 80µSec
1% Duty Cycle
r DS(on) -Drain-Source ON Resistance-(ohms)
ID(on) -ON Drain Current-(mA)
200
120
o
TA = +25 C
80
TA = +125oC
I D'Z' ≅ 7.5mA
40
0
4.0
6.0
8.0
10
2.0
VGS-Gate-Source Voltage (Volts)
FORWARD TRANSCONDUCTANCE
-VSON DRAIN CURRENT
g fs -Forward Transconductance-(mmhos)
30
25
o
TA = +25 C
20
o
TA = +125 C
15
10
5.0
0
10
20
30
40
50
I D -Drain Current (mA)
60
125
100
75
50
TA = +125 oC
25
o
TA = +25 C
0
35
VDS = 10V
f = 1KHz
PULSE TEST
80 µSec
1% Duty Cycle
I D = 1.0mA
150
70
6.0
2.0
4.0
8.0
10
VGS-Gate-Source Voltage (Volts)