VN0605T N-Channel Enhancement-Mode MOS Transistor CORPORATION VN0605T FEATURES ORDERING INFORMATION • Low rDS(on) <5Ω • Low cost Part Package Temperature Range -55oC to +150oC VN0605T Surface Mount SOT-23 For sorted chips in carriers see 2N7000 APPLICATIONS • Switching • Amplification PIN CONNECTIONS SOT-23 TOP VIEW 1 D 2 1 G 3 3 S 2 CD5 1 DRAIN 2 SOURCE 3 GATE PRODUCT MARKING VN0605T V05 ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) SYMBOL PARAMETERS/TEST CONDITIONS LIMITS VDS Drain-Source Voltage 60 VGS Gate-Source Voltage ±30 ID Continuous Drain Current IDM Pulsed Drain Current1 PD Power Dissipation TA = 25oC o TA = 100 C UNITS V 0.18 0.11 A 0.72 TA = 25oC 0.36 TA = 100 oC 0.14 TJ Operating Junction Temperature Range -55 to 150 Tstg Storage Temperature Range -55 to 150 TL Lead Temperature (1/16" from case for 10 sec.) W o C 300 THERMAL RESISTANCE RATINGS SYMBOL RthJA 1 THERMAL RESISTANCE Junction-to-Ambient Pulse width limited by maximum junction temperature. LIMITS UNITS 350 K/W VN0605T CORPORATION SPECIFICATIONSa SYMBOL LIMITS PARAMETER TYPb MIN 70 60 MAX UNIT TEST CONDITIONS STATIC V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate-Threshold Voltage IGSS Gate-Body Leakage IDSS Zero Gate Voltage Drain Current V 2.3 0.8 3.0 ±100 ±500 1 ID = 10µA, VGS = 0V VDS = VGS, I D = 1mA nA µA VGS = ±20V, VDS = 0V TJ = 125oC VDS = 50V, VGS = 0V TJ = 125oC 500 ID(ON) rDS(ON) gFS gOS On-State Drain Currentc Drain-Source On-Resistance 700 c Forward Transconductancec Common Source Output Conductance mA 4.5 7.5 3 5 5.5 10 180 c 500 80 500 VDS = 10V, VGS = 10V VGS = 4.5V, ID = 50mA Ω VGS = 10V, ID = 0.5A TJ = 125oC mS VDS = 10V, ID = 0.2A µS VDS = 50V, ID = 50mA pF VDS = 25V, VGS = 0V, f = 1MHz DYNAMIC Ciss Input Capacitance 16 60 Coss Output Capacitance 11 25 Crss Reverse Transfer Capacitance 2 5 tON Turn-On Time 7 20 tOFF Turn-Off Time 11 20 SWITCHING ns Notes: a. T A = 25oC unless otherwise noted. b. For design aid only, not subject to production testing. c. Pulse test; PW = ≤300µS, duty cycle ≤2%. VDD = 30V, RL = 150Ω, ID = 0.2A VGEN = 10V, RG = 25Ω (Switching time is essentially independent of operating temperature)