N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch CORPORATION 2N4351 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) • Low ON Resistance • Low Capacitance Gain • High • High Gate Breakdown Voltage • Low Threshold Voltage Drain-Source Voltage or Drain-Body Voltage . . . . . . . . . . 25V Peak Gate-Source Voltage (Note 1) . . . . . . . . . . . . . . . ±125V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC Operating Temperature Range . . . . . . . . . . . -55oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . 3mW/ oC PIN CONFIGURATION NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TO-72 ORDERING INFORMATION C D 1003 Part Package Temperature Range 2N4351 X2N4351 Hermetic TO-72 Sorted Chips in Carriers -55oC to +150oC -55oC to +150oC S G ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified) SYMBOL PARAMETER MIN MAX UNITS BVDSS Drain-Source Breakdown Voltage IGSS Gate Leakage Current 10 pA VGS = ±30V, VDS = 0 IDSS Zero-Gate-Voltage Drain Current 10 nA VDS = 10V, VGS = 0 VGS(th) Gate-Source Threshold Voltage 1 5 V 3 ID(on) "ON" Drain Current VDS(on) Drain-Source "ON" Voltage rDS(on) Drain-Source Resistance | yfs | Forward Transfer Admittance 25 V TEST CONDITIONS ID = 10µA, VGS = 0 VDS = 10V, ID = 10µA mA VGS = 10V, VDS = 10V 1 V ID = 2mA, VGS = 10V 300 ohms µS 1000 Crss Reverse Transfer Capacitance (Note 2) 1.3 Ciss Input Capacitance (Note 2) 5.0 Cd(sub) Drain-Substrate Capacitance (Note 2) 5.0 td(on) Turn-On Delay (Note 2) 45 tr Rise Time (Note 2) 65 td(off) Turn-Off Delay (Note 2) 60 tf Fall Time (Note 2) 100 NOTES: 1. Device must not be tested at ±125V more than once or longer than 300ms. 2. For design reference only, not 100% tested. VGS = 10V, ID = 0, f = 1kHz VDS = 10V, ID = 2mA, f = 1kHz VDS = 0, VGS = 0, f = 1MHz pF VDS = 10V, VGS = 0, f = 1MHz VD(SUB) = 10V, f = 1MHz ns