P-Channel Enhancement Mode MOSFET General Purpose Amplifier CORPORATION IT1700 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) • Low ON-Resistance • High Gain Noise Voltage • Low • High Input Impedance • Low Leakage Drain-Source and Gate-Source Voltage . . . . . . . . . . . . . -40V Peak Gate-Source Voltage (Note 1) . . . . . . . . . . . . . . . ±125V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature . . . . . . . . . . . . . . . . . . -65oC to +200oC Operating Temperature Range . . . . . . . . . . . -55oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . 3mW/ oC PIN CONFIGURATION TO-72 NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ORDERING INFORMATION S C G 1503 D Part Package IT1700 XIT1700 Hermetic TO-72 Sorted Chips in Carriers Temperature Range -55oC to +150oC -55oC to +150oC IT1700 CORPORATION ELECTRICAL CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified) SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS BVDSS Drain to Source Breakdown Voltage -40 V VGS = 0, I D = -10µA BVSDS Source to Drain Breakdown Voltage -40 V VGS = 0, I D = -10µA IGSS Gate Leakage Current IDSS (See note 2) Drain to Source Leakage Current 200 pA IDSS (150 C) Drain to Source Leakage Current 0.4 µA ISDS Source to Drain Leakage Current 400 pA ISDS (150 C) Source to Drain Leakage Current 0.8 µA VGS(th) Gate Threshold Voltage -5 V rDS(on) Static Drain to Source "on" Resistance 400 ohms IDS(on) Drain to Source "on" Current gfs Forward Transconductance Common Source Ciss Small Signal, Short Circuit, Common Source, Input Capacitance Crss Coss o o -2 2 VGS = 0, VDS = -20V VGS = VDS, I D = -10µA VGS = -10V, VDS = 0 mA VGS = -10V, VDS = -15V µS VDS = -15V, ID = -10mA, f = 1kHz 5 pF VDS = -15V, ID = -10mA f = 1MHz (Note 3) Small Signal, Short Circuit, Common Source, Reverse Transfer Capacitance 1.2 pF VDG = -15V, I D = 0 f = 1MHz (Note 3) Small Signal, Short Circuit, Common Source, Output Capacitance 3.5 pF VDS = -15V, ID = -10mA f = 1MHz (Note 3) 2000 4000 NOTES: 1. Device must not be tested at ±125V more than once nor longer than 300ms. 2. Actual gate current is immeasurable. Package suppliers are required to guarantee a package leakage of < 10pA. External package leakage is the dominant mode which is sensitive to both transient and storage environment, which cannot be guaranteed. 3. For design reference only, not 100% tested.