High-Speed Analog N-Channel/Enhancement-Mode DMOS FETS CORPORATION SD400 / SD402 FEATURES DESCRIPTION APPLICATIONS The SD400 and SD402 are N-Channel Enhancement Mode devices processed utilizing Calogic’s proprietary high speed, low capacitance lateral DMOS technology. These devices are excellent switch drivers where low threshold offers the designer the advantage of CMOS and TTL compatibility with ultra high switching speeds. • Fast switching . . . . . . . . . . . . . . . . . . . . . . . . . . . ton <1ns • Low capacitance . . . . . . . . . . . . . . . . . . . Crss 0.3 pF (typ) threshold . . . . . . . . . . . . . . . . . . . . . . . . . <1.5V max • Low • CMOS and TTL Compatible Input • Switch Drivers • Video Switches Pullups • Active • VHF/UHF Amplifiers ORDERING INFORMATION PIN CONFIGURATION Part Package SD400BD SD402BD XSD400 XSD402 Plastic TO-92 Plastic TO-92 Sorted Chips in Carriers Sorted Chips in Carriers Temperature Range -55oC to +125oC -55oC to +125oC -55oC to +125oC -55oC to +125oC SCHEMATIC DIAGRAM DRAIN (2) TO-92 GATE (3) SOURCE (1) CD1-1 D S G 7-74 SD400 / SD402 CORPORATION ABSOLUTE MAXIMUM RATINGS (TC = +25oC unless otherwise noted) VDS VGS VDG VSD ID Drain-Source Voltage SD400 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30V SD402 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +15V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . -0.3 V +20 V Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . -0.3 V +20 V Source-Drain Voltage . . . . . . . . . . . . . . . . . . . . -0.3 V Continuous Drain Current . . . . . . . . . . . . . . . . . 50 mA Power Dissipation (at or below TC = +25oC) . . 300mW Linear Derating Factor. . . . . . . . . . . . . . . . 3.0 mW/ oC Operating Storage and Junction Temperature Range . . . . . . -55oC to +125oC ELECTRICAL CHARACTERISTICS (TA = +25oC unless otherwise noted) SD400 SYMBOL SD402 CHARACTERISTICS UNIT MIN TYP 30 35 MAX MIN TYP 15 25 TEST CONDITIONS MAX STATIC BVDSS Drain-Source Breakdown Voltage ID(OFF) Drain-Source OFF Leakage Current 1.0 IGSS Gate-Source Leakage Current 1.0 ID(ON) Drain-Source ON Current 50 VGS(th) Gate-Source Threshold Voltage 0.7 VDS(ON) Drain-Source ON Voltage 150 250 rDS(ON) Drain-Source ON Resistance 150 VDS(ON) Drain-Source ON Voltage rDS(ON) Drain-Source ON Resistance V ID = 1.0µA, VGS = 0 1.0 µA VDS = 15 V, VGS = 0 1.0 µA VGS = 20 V, VDS = 0 mA VDS = 10 V, VGS = 10 V Pulse Test 1.5 V ID = 1.0 µA, VDS = VGS 150 250 mV 250 150 250 ohms 60 80 60 80 mV 60 80 60 80 ohms 100 50 1.5 100 0.7 ID = 1 mA, VGS = 2.4 V ID = 1 mA, VGS = 4.5 V DYNAMIC gfs Common-Source Forward Transconductance ciss Common-Source Input Capacitance 4.0 5.0 4.0 5.0 coss Common-Source Output Capacitance 1.8 2.5 1.8 2.5 crss Common-Source Reverse Transfer Capacitance 0.3 0.5 0.3 0.5 td(ON) Turn ON Delay Time 0.7 1.0 0.7 1.0 tr Rise Time 0.8 1.0 0.8 1.0 t(OFF) Turn OFF Time 12 8.0 12 7-75 8.0 12 12 mS ID = 20 mA, VDS = 10 V f = 1 KHz Pulse Test pF VDS = 10 V, VGS = 0 f = 1 MHz ns VDD = 10 V, RL = 680 VG(ON) = 10 V, RG = 51 CL = 1.5 pF