High Speed DMOS N-Channel Switch CORPORATION SD404 FEATURES • High Speed Switching. . . . . . . . . . . . . . . . . . . . . tr < 2ns • Low Capacitance . . . . . . . . . . . . . . . . . . crss 1.2pF typical Low on Resistance . . . . . . . . . . . . . . . . . 8 ohm max • Very • Low Threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . < 1.5V • CMOS and TTL Compatible Input • Available in Surface Mount Package APPLICATIONS DESCRIPTION The SD404 is an N-Channel Enhancement Mode device processed with Calogic’s ultra high speed lateral DMOS technology. The SD404 is an excellent switch driver or analog switch. Its low threshold offers the designer an advantage in applying the benefits of low on resistance and high speed switching to low voltage circuits. ORDERING INFORMATION Drivers • Switch • Video Switches • VHF/UHF Amplifiers Part Package SD404BD Plastic TO-92 Package SD404CY SOT-89 Surface Mount XSD404 Sorted Chips in Carriers PIN CONFIGURATION Temperature Range -55oC to +125oC -55oC to +125oC -55oC to +125oC SCHEMATIC DIAGRAM TO-92 DRAIN (2) GATE (3) D S G CD3 SOURCE (1) G SOT-89 S (TAB) D PRODUCT MARKING TO-92 SD4040B SOT-89 SD404 SD404 CORPORATION ABSOLUTE MAXIMUM RATINGS (TA = +25oC unless otherwise noted) Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V +20V Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V +20V Source-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V Peak Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . +0.8A Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . 100mA Power Dissipation (at or below TA = +25oC) . . . . . . . . 300mW Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . 3.0mW/ oC Operating Junction and Storage Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC ELECTRICAL CHARACTERISTICS (TA = +25oC unless otherwise specified) SYMBOL CHARACTERISTICS MIN TYP 20 25 MAX UNIT TEST CONDITIONS STATIC BVDSS Drain-Source Breakdown Voltage V ID = 1.0µA, VGS =0 ID(OFF) Drain-Source OFF Leakage Current 1.0 µA VDS = 15V, VGS = 0 IGSS Gate-Source Leakage Current 10 µA VGS = 20V, VDS = 0 ID(ON) Drain-Source ON Current 0.8 1.2 A VDS = 10V, VGS = 10 V (Note 1) VGS(th) Gate-Source Threshold Voltage 0.5 1.1 1.5 V ID = 1.0µA, VDS = VGS VDS(ON) Drain-Source ON Voltage 200 mV rDS(ON) Drain-Source ON Resistance 20 ohms VDS(ON) Drain-Source ON Voltage 800 mV rDS(ON) Drain-Source ON Resistance 8.0 ohms ID = 10mA VGS = 2.4V (Note 1) ID = 100mA VGS = 4.5V DYNAMIC gfs Common-Source Forward Transconductance 100 ciss Common-Source Input Capacitance 12 18 coss Common-Source Output Capacitance 6.0 8.0 crss Common-Source Reverse Transfer Capacitance 1.2 2.0 td(on) Turn ON Delay Time 1.0 1.5 tr Rise Time 1.0 2.0 t(OFF) Turn OFF Time 1.0 mS ID = 0.3A VDS = 20V f = 1KHz pf VDS = 20V, VGS = 0 f = 1MHz ns VDD = 10V, RL = 390Ω VG(ON) = 10V, RG = 51Ω CL = 1.5pF (Note 1) Note 1: Pulse Test, 80µSec, 1% Duty Cycle SWITCHING TIMES TEST CIRCUIT VDD TEST WAVEFORMS VG(on) RL 90% V in 0 VOUT 10% t off t d(on) VG 510 Ω 51 Ω OSCILLOSCOPE RG INPUT PULSE t r <_ 0.5 nSEC PULSE WIDTH - 100 nSEC SAMPLING OSCILLOSCOPE t r < 0.36 nSEC Rin > 1M Ω C in < 2.0 pF t on tr VDD t fall t d(off) 90% 90% Vout ~ ~ 0V 10% 10% SD404 CORPORATION TYPICAL PERFORMANCE CHARACTERISTICS (TA = +25oC unless otherwise noted) CAPACITANCES -VSDRAIN-SOURCE VOLTAGE FORWARD TRANSCONDUCTANCE -VSON DRAIN CURRENT 150 125 20 VDS = 20V f = 1KHz PULSE TEST 80µSec 1% Duty Cycle 100 75 c iss 12 8.0 4.0 50 0 c oss c rss 5.0 10 15 20 25 VDS -Drain-Source Voltage (Volts) 25 0 50 100 150 200 250 300 ON DRAIN CURRENT -VSGATE-SOURCE VOLTAGE 350 I D -Drain Current-(mA) 10.0 VDS = 10V PULSE TEST 80µ Sec 1% Duty Cycle 6.0 DRAIN-SOURCE ON RESISTANCE -VSGATE-SOURCE VOLTAGE 4.0 I D(on) -ON Drain Current (Amps) 35 PULSE TEST 80µ Sec 1% Duty Cycle 30 r DS(on) ON Resistance (Ohms) VGS= 0 f = 1MHz 16 Capacitance (pF) g fs -Forward Transconductance-(mmhos) 175 25 20 I D = 100mA 15 10 2.0 o TA = +25 C 1.0 0.6 TA = +125 oC 0.4 0.2 0.1 0.06 I D = 10mA I D'Z' ≅ 40mA 0.04 5.0 0.02 0 2.0 4.0 6.0 8.0 10 VGS-Gate- Source Voltage (Volts) 12 14 0.01 0 12 2.0 4.0 6.0 8.0 10 VGS -Gate-Source Voltage (Volts) 14