FAST DMOS FET Switches N-Channel Enhancement-Mode CORPORATION SST211 / SST213 / SST215 FEATURES • High Speed Switching. . . . . . . . . . . . . . . . . . . . td(ON) 1ns • Low Capacitance . . . . . . . . . . . . . . . . . . . . . 2.4pF typical ON Resistance . . . . . . . . . . . . . . . . . . . . 50Ω typycal • Low • High Gain • Surface Mount Package APPLICATIONS DESCRIPTION Designed for audio, video and high frequency applications, the SST211 Series is a high speed, ultra low capacitance SPST analog switch. Utilizing Calogic’s proprietary DMOS processing the SST211 Series features an integrated zener diode designed to protect the gate from electrical over stress. ORDERING INFORMATION • Ultra High Speed Analog Switching and Hold • Sample • Multiplexers • High Gain Amplifiers PIN CONFIGURATION Part Package SST211 SST213 SST215 XSST211 XSST213 XSST215 SOT-143 Surface Mount SOT-143 Surface Mount SOT-143 Surface Mount Sorted Chips in Carriers Sorted Chips in Carriers Sorted Chips in Carriers Temperature Range -55oC to +125oC -55oC to +125oC -55oC to +125oC -55oC to +125oC -55oC to +125oC -55oC to +125oC SCHEMATIC DIAGRAM DRAIN (2) 3 BODY (4) 2 GATE (3) 4 CD1-1 1 SOURCE (1) PRODUCT MARKING SST211 211 SST213 213 SST215 215 SST211 / SST213 / SST215 CORPORATION ABSOLUTE MAXIMUM RATINGS (Tc = +25oC unless otherwise noted) Parameter Breakdown Voltages SST211 SST213 SST215 Unit +30 +10 +30 +15 -15 +25 -0.3 +25 -30 +25 +10 +10 +15 +15 -15 +25 -0.3 +25 -15 +25 +20 +20 +25 +25 -25 +30 -0.3 +30 -25 +30 V V V V V V V V V V VDS VSD VDB VSB VGS VGB VGD Tj Operating Junction Temperature Range . . -55 to +125oC TS Storage Temperature Range . . . . . . . . . . . -55 to +150oC ID Continous Drain Current . . . . . . . . . . . . . . . . . . . . . 50mA PT Power Dissipation (at or below Tc = +25oC) . . . . 360mW Linear Derating Factor3.6mW/ o ELECTRICAL CHARACTERISTICS (Tc = +25oC unless otherwise noted) SYMBOL CHARACTERISTICS SST211 SST213 SST215 MIN TYP MAX MIN TYP MAX MIN TYP MAX UNIT TEST CONDITIONS STATIC 30 35 10 25 ID = 10µA, VGS = VBS = 0 BVDS Drain-Source Breakdown Voltage BVSD Source-Drain Breakdown Voltage 10 BVDB Drain-Body Breakdown Voltage 15 15 25 ID = 10nA, VGB = 0 Source OPEN BVSB Source-Body Breakdown Voltage 15 15 25 IS = 10µA, VGB = 0 Drain OPEN ID(OFF) Drain-Source OFF Current IS(OFF) Source-Drain OFF Current IGBS Gate-Body Leakage Current VGS(th) Gate Threshold Voltage rds(on) Drain-Source 1 ON Resistance 10 25 20 10 ID = 10nA, VGS = VBS = -5V 25 20 IS = 10nA, VGD = VBD = -5V V 0.2 0.6 10 0.2 10 0.6 10 VDS = 10V 10 0.2 10 0.6 10 10 0.1 2.0 VDS = 20V VSD = 10V 10 10 0.5 nA 1.0 2.0 1.0 2.0 50 70 50 70 0.1 50 70 30 45 30 45 30 45 VSD = 20V µA V ohms VGB = 25V VGB = 30V VGS = VBS = -5V VGD = VBD = -5V VDB = VSB = 0 VDS = VGS, ID = 1µA, VSB = 0 VGS = 5V VGS = 10V ID = 1mA VSB = 0 DYNAMIC gfs Common-Source 1 Foward Transcond. 10 12 10 12 10 12 C(gs + gd + gb) Gate Node Capacitance 2.4 3.5 2.4 3.5 2.4 3.5 C(gd + db) Drain Node Capacitance 1.3 1.5 1.3 1.5 1.3 1.5 C(gs + sb) Source Node Capacitance 3.5 4.0 3.5 4.0 3.5 4.0 C(dg) Reverse Transfer Capacitance 0.3 0.5 0.3 0.5 0.3 0.5 td(ON) Turn ON Delay Time 0.7 1.0 0.7 1.0 0.7 1.0 tr Rise Time 0.8 1.0 0.8 1.0 0.8 1.0 t(OFF) Turn OFF Time 10 NOTE 1: Pulse Test, 80 Sec, 1% Duty Cycle Typical Performance Characteristics: See SD211-215 Series 10 10 mS VDS = 10V, ID = 20mA f = 1KHz, VSB = 0 pF VDS = 10V VGS = VBS = -15V f = 1MHz ns VDD = 5V, VG(ON) = 10V RL = 680, RG = 51