1N5194 1N5195 1N5196 • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2 mA/°C From 25°C to 150°C 1.0 mA/°C From 150°C to 175°C Forward Current: 650 mA ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified TYPE VRM V RWM IO IO TA = 150°C I FSM TP = 1/120 s V (pk) V (pk) mA mA TA = 25°C A 1N5194 1N5195 1N5196 80 180 250 70 180 225 200 200 200 50 50 50 2 2 2 TYPE VF @100mA I R1 at V RWM TA = 25°C I R2 at V RM TA = 25°C I R3 at V RWM TA = 150°C V dc nA dc µA µA dc 0.8 - 1.0 0.8 - 1.0 0.8 - 1.0 25 25 25 100 100 100 5 5 5 1N5194 1N5195 1N5196 FIGURE 1 DESIGN DATA CASE: Hermetically sealed glass case. DO – 35 outline. LEAD MATERIAL: Copper clad steel. LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 250 ˚C/W maximum THERMAL IMPEDANCE: (ZOJX): 70 ˚C/W maximum POLARITY: Cathode end is banded. MOUNTING POSITION: ANY. 22 COREY STREET, MELROSE, MASSACHUSETTS 02176 PHONE (781) 665-1071 FAX (781) 665-7379 WEBSITE: http://www.cdi-diodes.com E-mail: [email protected] IN5194 thru IN5196 1000 1 -65ºC 25º C 100 ºC 15 0ºC 10 0.1 .3 .4 .5 .6 .7 .8 .9 1.0 VF - Forward Voltage (V) 1.1 1.2 1.3 FIGURE 2 Typical Forward Current vs Forward Voltage 1000 100 IR - Reverse Current - (µA) IF - Forward Current - (mA) 100 10 1 150ºC 0.1 C 100º 25ºC .01 -65ºC NOTE : .001 20 40 60 80 100 120 140 Percent of Reverse Working Voltage (%) FIGURE 3 Typical Reverse Current vs Reverse Voltage All temperatures shown on graphs are junction temperatures