CDI-DIODE CD6916

• 1N5711 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/444
CD2810
CD5711
CD5712
CD6857
CD6858
CD6916
• 1N5712 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/445
• SCHOTTKY BARRIER DIODE CHIPS FOR GENERAL PURPOSE APPLICATION
• SILICON DIOXIDE PASSIVATED
• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,
WITH THE EXCEPTION OF SOLDER REFLOW
15 MILS
3 MILS
MAXIMUM RATINGS
Operating Temperature: -55°C to +125°C
Storage Temperature: -65°C to +150°C
BACKSIDE IS CATHODE
FIGURE 1
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
CDI
MINIMUM
MAXIMUM
MAXIMUM
MAXIMUM REVERSE
MAXIMUM
TYPE
BREAKDOWN
FORWARD
FORWARD
LEAKAGE CURRENT
CAPACITANCE @
NUMBER
VOLTAGE
VOLTAGE
VOLTAGE
VBR @ 10 µ A
VF @ 1 mA
VF @ IF
V
(2)
NUMBER
VOLTS
VOLTS
VOLTS @ mA
nA
VOLTS
PICO FARADS
CD2810
20
0.41
1.0 @ 35
100
15
1.2
CD5711
70
0.41
1.0 @15
200
50
2.0
2
CD5712
20
0.41
1.0 @ 35
150
16
1.2
1
CD6857
20
0.35
0.75 @ 35
150
16
4.5
2
CD6858
70
0.36
0.65 @ 15
200
50
4.5
2
0.27 @ 0.1
100
1
0.34 @ 1.0
200
20
5
2
0.47 @ 10.0
500
40
CD6916
40
(2)
0.34
NOTES: (1) Effective Minority Carrier Lifetime (τ) is 100 Pico Seconds
(2) CD6916 V
BR
1
5.5 MILS
CT
15 MILS
1R @ VR
= 0 VOLTS
R
f = 1.0 MHZ
FIGURE
BACKSIDE IS CATHODE
FIGURE 2
DESIGN DATA
measured @ 500 nanoamps
METALLIZATION:
Top: (Anode)...................... ..Al
Back: (Cathode)................. Au
o
AL THICKNESS.................25,000 A Min
o
GOLD THICKNESS... ..........4,000 A Min
CHIP THICKNESS............. .........10 Mils
TOLERANCES: ALL Dimensions
+ 2 mils, Except Anode Pad Where
Tolerance is + 0.5 mils.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
CD2810, CD5711, CD5712, CD6857, CD6858
and CD6916
10,000
IR – REVERSE CURRENT (nA)
IF – FORWARD CURRENT (mA)
100
10
1.0
.1
1000
100
10
.01
1.0
0
.2
.4
.6
.8
1.0
1.2
0
5.0
10
15
20
25
VF – FORWARD VOLTAGE (V)
VR – REVERSE VOLTAGE (V)
(PULSED)
Figure 1.
I-V Curve Showing Typical Forward
Voltage Variation with Temperature for the
CD5712 and CD2810 Schottky Diodes.
Figure 2.
CD5712 and CD2810
Typical Variation of Reverse Current
(IR) vs. Reverse Voltage (VR) at Various
Temperatures.
30
100,000
50
10
5
1
.5
.1
.05
.01
RD – DYNAMIC RESISTANCE (!!)
IR – REVERSE CURRENT (nA)
IF – FORWARD CURRENT (mA)
1000
10,000
1000
100
10
1
0
.2
.4
.6
.8
1.0
1.2
VF – FORWARD VOLTAGE (V)
Figure 3.
I-V Curve Showing Typical Forward Voltage
Variation with Temperature for Schottky Diode
CD5711.
0
10
20
30
40
50
60
VR – REVERSE VOLTAGE (V)
(PULSED)
Figure 4.
CD5711 Typical Variation of Reverse Current
(IR) vs. Reverse Voltage (VR) at Various
Temperatures.
100
10
1
.1
1.0
10
IF – FORWARD CURRENT (mA)
(PULSED)
Figure 5.
Typical DynamiC Resistance (RD) vs.
Forward Current (IF).
100